Handbook of Thin Films, Five-Volume Set

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Preface 2......Page 2
Handbook of Thin Film Materials 9......Page 9
UPd 2......Page 23
Tellurium, 3......Page 24
Vacuum system, 8......Page 29
--- volume, 9......Page 30
Scaling up process, 10......Page 31
Roll-to-roU configuration, 11......Page 32
physics and chemistry of, 14-21......Page 35
15......Page 36
Vibrational excitation, 18......Page 39
Transport coefficients, 21......Page 42
Small reactor, comparison with experiments, 30......Page 51
Particle-in-cell/Monte Carlo (PIC/MC), 33......Page 54
Plasma analysis, 39-53......Page 60
Electrostatic probes, 40......Page 61
Quadrupole mass spectrometer (QMS), 42......Page 63
51......Page 72
Total pressure, 53......Page 74
--- internal, 55......Page 76
Deposition models, 63-67......Page 84
Surface adsorption, 64......Page 85
--- solubility in silicon, 65......Page 86
Weak bond density, 67......Page 88
Deposition conditions, optimization of, 68......Page 89
Layer by layer (LBL), 73......Page 94
RF modulation, 74......Page 95
76......Page 97
9.2. Experimental Setup 77......Page 98
9.3. Material Properties and Deposition Conditions 78......Page 99
79......Page 100
Thin film electroluminescent (TFEL)flat panel displays, 103......Page 124
Epitaxy, definition, 104......Page 125
Self-limiting growth process, ALD, 106......Page 127
--- MBE, 108......Page 129
Transport gas, in ALD reactors, 109......Page 130
--- moving, flow-type ALD reactors with, 112-113......Page 133
Volatility, ALD, 113......Page 134
Thermodynamics, ALD precursors, 121......Page 142
Film materials, deposited by ALD, 125-138......Page 146
126......Page 147
--- insulators for, 128-131......Page 149
--- in ALD, 133-134......Page 154
Passivating and protecting applications, ALD, 134-135......Page 155
Transition metal nitrides, in ALD, 135-137......Page 156
Metal processes, in ALD, 137-138......Page 158
Solar cell absorbers, in ALD, 138......Page 159
Pulse times, ALD, 139-140......Page 160
Reaction mechanism studies, ALD, 144-152......Page 165
8. Summary 152......Page 173
References 153......Page 174
--- history and applications, 162......Page 182
--- general electrical properties, 163-164......Page 183
Yttrium aluminum garnet (YAG) laser, in TCO films, 164-166......Page 184
3.1. Principles of Excimer Lasers 165......Page 185
--- excimer, in TCO films, 166......Page 186
--- technique, 167-175......Page 187
--- background gas, 168-170......Page 188
Target to substrate distance, PLD technique, 170-171......Page 190
--- PLD system, 171-172......Page 191
initial growth, 172-174......Page 192
--- film deposition and characterization, 174-175......Page 194
--- properties of films, 175-177......Page 195
Structural properties, PLD ITO films, 177-179......Page 197
Temperature, ITO film deposits, oxygen pressure effects, 184-186......Page 204
188......Page 208
--- chemical state analysis, 191-193......Page 211
Laser irradiation, 193-208......Page 213
--- ITO films, 195-196......Page 215
Sn-doping, effect on electrical properties of ITO films, 196-200......Page 216
--- ITO films deposited at 200......Page 220
--- effects on laser-irradiated films, 205-208......Page 225
Zinc oxide (ZnO), 208-212......Page 228
--- ITO films, applications, 212-213......Page 232
References 213......Page 233
Plasmas, 219-260, see also specific type......Page 238
Electron temperature Te, in cold plasmas, 221-222......Page 240
--- chemistry, 224-226......Page 243
--- applications, 226-257......Page 245
Plasma polymerization, 236-240......Page 255
Surface treatments, cold plasmas in, 240-252......Page 259
Surface termination, H2 plasma treatment, 253-257......Page 272
References 257......Page 276
--- electrochemical formation of binary III-V compounds, 262......Page 281
Zinc-blende structure, 263......Page 282
Simultaneous cathodic electrodeposition (codeposition), 266......Page 285
--- kinetic aspects, 270-271......Page 289
Pourbaix\'s equilibrium diagrams, aqueous solutions, 271-273......Page 290
parasitic reactions, 273-274......Page 292
Cathodic codeposition process, classification of, 274-275......Page 293
Molten salts, codeposition from, 275-276......Page 294
Sequential codeposition, 276-277......Page 295
--- group III-V compounds, 277-304......Page 296
Aluminum compounds, electrodeposition, 278-279......Page 297
Gallium phosphide, electrodeposition, 279-280......Page 298
Indium phosphide, electrodeposition, 280-283......Page 299
Gallium arsenide, electrodeposition, 283-289......Page 302
Indium arsenide, electrodeposition, 293-297......Page 312
Gallium antimonide, electrodeposition, 297-299......Page 316
Indium antimonide, electrodeposition, 299-303......Page 318
--- electrodeposition, 303-304......Page 322
--- diffusion process and formation, 304-307......Page 323
--- diffusion process and formation, 308-310......Page 327
--- 310-315......Page 329
--- 312-313......Page 331
--- effects on diffusion, 313......Page 332
References 315......Page 334
--- structures and properties, 319-320......Page 338
--- structures and formation process, 320......Page 339
Supercritical clusters, 321......Page 340
Zeldovich-Frenkel equation, 323......Page 342
--- observations in, 333-338......Page 352
--- measurement of, 338-352......Page 357
342......Page 361
345......Page 364
--- characteristic time, 347......Page 366
--- control of, 352-369......Page 371
--- size distributions, 361......Page 380
--- stable, formation time, 362......Page 381
Acknowledgments 369......Page 388
References 370......Page 389
Ion implant doping, isolation of GaN and related materials, 375-408......Page 393
Secondary ion mass spectroscopy (SIMS), ion implantation, 376......Page 394
Acceptor implants, 380-381......Page 398
--- damage removal, 381-385......Page 399
Surface protection, high temperature annealing, 385-387......Page 403
Susceptors, high temperature annealing, 387-388......Page 405
Rapid thermal processing (RTP), 388......Page 406
NH3 annealing, 392-393......Page 410
Implanted species, diffusivity of, 393-396......Page 411
p-n junction formation, 396-397......Page 414
isolation, 397-405......Page 415
--- devices, 405-406......Page 423
References 406......Page 424
Plasma etching, GaN and related materials, 409-453......Page 427
Reactive ion etching (REI), 410......Page 428
Reactive ion bean etching (RIBE), 412......Page 430
--- Cl2-based, 413......Page 431
418......Page 436
--- CH4/H2/Ar, 422-424......Page 440
Etch surface morphology, 424--425......Page 442
Surface stoichiometry, evaluation of plasma-induced damage, 425......Page 443
--- n-GaN, 426--429......Page 444
p-GaN, 430--434......Page 448
--- Schottky diodes, 434--438......Page 452
p-n junctions, 438--441......Page 456
Ridge waveguide lasers, 441-443......Page 459
443......Page 461
Heterostructure field effect transistors (HFETs), 446-448......Page 464
Ultraviolet photodetectors, 448-450......Page 466
References 450......Page 468
--- in physically vapor-deposited thin films, 455-522......Page 472
Volmer-Weber growth mode, PVD thin films, 457-458......Page 474
Stranski-Kastanov growth mode, PVD thin films, 458-459......Page 475
Structure-zone models, 459-462......Page 476
--- effect on microsctructure of PVD films, 462-463......Page 479
--- radius of curvature, residual stresses from, 470-474......Page 487
--- residual stress measurements with, 474-477......Page 491
--- 477......Page 494
--- mechanical stability of, 478-481......Page 495
Thermal stresses, origin in PVD films, 482-484......Page 499
--- origin in PVD films, 484--490......Page 501
--- effects of various impurities, 490-491......Page 507
--- major process parameter effects, 492-497......Page 509
5.1. Pressure Effect 493......Page 510
Substrate bias voltage, effects on PVD films, 494--495......Page 511
--- effects on intrinsic stresses, 495-497......Page 512
--- residual stresses in, 497-505......Page 514
--- residual stresses in, 505-507......Page 522
--- residual stresses in, 507-510......Page 524
--- grounded substrates, amorphous carbon films deposited by, 510-515......Page 527
characteristics of deposition process, 515-516......Page 532
7. Summary and Conclusion 519......Page 536
References 520......Page 537
Membrane structures, reconstruction with artificial methods, 523-557......Page 540
--- principles of, 524-528......Page 541
Surface potential, monolayers at the air-water interface, 526......Page 543
Monolayers, techniques for studying, 528-532......Page 545
X-ray reflectivity, studying monolayers at the air-water interface, 529......Page 546
--- air-water interface, 533-538......Page 550
--- protein monolayers on, 538-540......Page 555
--- thermal stability of proteins in, 543-544......Page 560
5. Conclusions 544......Page 561
References 545......Page 562
Metal films, electrocrystallization of, structure formation during, 559-586......Page 575
--- metal films, 560-562......Page 576
--- noncoherent nucleation, 563-566......Page 579
--- classical theory of, 566-570......Page 582
--- atomistic analysis of, 570--574......Page 586
--- factors influencing structure of, 574-582......Page 590
Foreign particle adsorption, effects on structure of electrodeposits, 576-580......Page 592
--- 580-582......Page 596
Multitwinning, mechanism, 582-584......Page 598
8. Conclusions 584......Page 600
References 585......Page 601
--- intermetallic compounds, 587-608......Page 603
--- equipment, 588-593......Page 604
--- general considerations in growth, 593-594......Page 609
--- phase stabilization and orientation selection, 594-601......Page 610
Epitaxial strain, MBE growth, 601-604......Page 617
morphological aspects of growth, 604--608......Page 620
608......Page 624
TbFe2 thin films, magnetic properties of, 611......Page 627
Ultrathin Co-PT heterostructures, magnetization reversal process, 615......Page 631
Metallic antiferromagnets, exchange anisotropy with, 618-619......Page 634
--- antiferromagnetic order parameter, thin film surface, 619-620......Page 635
Order--disorder phenomena, 620-623......Page 636
Acknowledgments 623......Page 639
References 624......Page 640
--- thin films, 627-673......Page 643
--- composition of, 629-651......Page 645
Laser and deposition processing parameters, 630-631......Page 646
Evaporating material, dependence of composition of PLD films, 631-634......Page 647
Refractory materials films, mechanism of formation, 634......Page 650
Target type and chemical bonding, PLD films, 643-644......Page 659
2.5. Conclusions 650......Page 666
--- role of molecules and large clusters, 651-652......Page 667
Gas-phase clustering, PLD films, 652-653......Page 668
--- crystallization temperature and, 653-654......Page 669
--- effects on epitaxial growth of PLD films, 655-658......Page 671
--- ways to control, 658-659......Page 674
polymorphism in, 659-661......Page 675
--- boron nitride films, 660-661......Page 676
Splashing, in PLD films, 661--662......Page 677
Laser-ablated metals, vapor portion in products of, 662-663......Page 678
--- influence of target properties, 666-670......Page 682
Thermal conductivity, in compound film property formation, 667-668......Page 683
powder targets, 668-670......Page 684
7. General Conclusions 670......Page 686
References 671......Page 687
Single-crystal fl\'-alumina films, 675-698......Page 690
--- growth, 677......Page 692
Vaporization source, 678......Page 693
3.3. Alkali Vapor-Sapphire Substrate Reactions 679......Page 694
--- characterization, 681-687......Page 696
--- single-crystal film, 682......Page 697
4.3. Structural Transformation from a- to fl\' -A1203 684......Page 699
Single-crystal platelets, 687-688......Page 702
688......Page 703
--- isomorphs, ion exchange preparation of, 689-691......Page 704
--- luminescence investigation, 691-694......Page 706
8.2. Luminescence Patterning of Single-Crystal/31 -A1203 Films 692......Page 707
10.1. /3  - and fl-A1203 Isomorphs 694......Page 709
10.2. Optical Refractivity of/3 \' - and fl-A1203 695......Page 710
References 697......Page 712
Temperature quenches, 1-2......Page 723
18......Page 740
--- coalescence growth in, 33......Page 755
--- Lifshitz-Slyozov-Wagner model, 40-43......Page 762
--- linking to early and late stage growth, 43-44......Page 765
--- for small islands, 45......Page 767
--- transition from ripening, 54-55......Page 776
References 55......Page 777
Symmetry selection rule, for band structures, 62......Page 783
--- for band structure measurement, 63-64......Page 784
--- energy and angular distribution of sputtered ions, 64......Page 785
XANES spectroscopy, and band structure measurement, 67......Page 788
Carbon monoxide monolayer band structure, 69-71......Page 790
Molecular nitrogen band structure, 71-74......Page 792
Nitrosyl bonding, 74-75......Page 795
Oxygen band structure of molecular, 75-77......Page 796
Di-halogen absorption, 77-78......Page 798
--- ammonia, 78-79......Page 799
Water band structure, 79......Page 800
Thiolate band structure, 80-82......Page 801
Ethylidene band structure, 82......Page 803
--- band structure, 84-86......Page 805
Carboranes band structure, 87-89......Page 808
Metallocenes band structure, 89-90......Page 810
Porphyrins band structure, 90-92......Page 811
--- large aromatics, 92-97......Page 813
--- organic polymers, 97-103......Page 818
Polystyrene band structure, 98......Page 819
Teflon TM, 99......Page 820
Polythiophenes, 100......Page 821
Tetrethiafulvalene-tetracyanoquinodimethane, 101-103......Page 822
--- band structure, 103-105......Page 824
25. Conclusion 105......Page 826
References 106......Page 827
Hard coatings, 115-116......Page 836
Thermal conductivity, of diamond, 116......Page 837
--- for diamond film deposition, 119-120......Page 840
--- of diamond films, 129......Page 850
--- WC-Co for diamond film deposition, 140-142......Page 861
--- properties, 147-148......Page 868
Turbostratic boron nitride (tBN), 148......Page 869
Wurtzite boron nitride (wBN), 149......Page 870
Thermal spike model, of cubic boron nitride synthesis, 152......Page 873
Subplantation model, of cubic boron nitride synthesis, 153......Page 874
Nanindentation technique, 156-157......Page 877
--- phase purity, 157-158......Page 878
--- structures, 159-160......Page 880
--- phases, 160-162......Page 881
Defect zinc-blende structure, of carbon nitride, 162......Page 883
--- and carbon nitride characterization, 167, 168f, 169f......Page 888
--- and carbon nitride thin films, 172-173......Page 893
--- effect of substrate bias change, 173......Page 894
4.7. Conclusions 180......Page 901
References 181......Page 902
Internal reflection spectroscopy, 191-192......Page 912
Single-beam-sample-reference (SBSR) technique, 192......Page 913
--- in isotropic, nonabsorbing media, 195-197......Page 916
--- in isotropic transparent media, 197-198......Page 918
--- vector transformations, 205-206......Page 926
--- ATR attachment for, 211-212......Page 932
Modulated excitation (ME) spectroscopy, 212-216......Page 933
--- Immobilized membrane assemblies, 216-217......Page 937
--- optical properties, 219-221......Page 940
--- 224-225......Page 945
and aqueous solutions, 225-226......Page 946
6. Conclusions 226......Page 947
Weak-absorption approximation, 227......Page 948
Thin film characterization techniques, 231......Page 951
related ion-beam techniques, 232......Page 952
--- instrumentation, 233-234......Page 953
--- basic concepts, 234-240......Page 954
--- non-Rutherford backscattering, 240-241......Page 960
in single crystals, 241-242......Page 961
--- transverse continuum potential, 242-244......Page 962
--- axis alignment, 248-249......Page 968
--- single crystal defect analysis, 249-254......Page 969
--- by RBS-channeling technique, 254-257......Page 974
--- interdiffusion study by ion-beam techniques, 257-260......Page 977
--- Fe/Cr GMR structural study, 260-262......Page 980
--- n-i-p-i semiconductor, 262-264......Page 982
TOF-MEIS technique, 264-265......Page 984
--- ion effects, 265-266......Page 985
--- kink angle and strain, 266-267......Page 986
--- dechanneling and strain, 267-268......Page 987
strain measurement by channeling angular scan analysis, 268-269......Page 988
--- strain measurement by planar dechanneling analysis, 269-274......Page 989
5.5. Steering Effect 272......Page 992
References 274......Page 994
1. Introduction 277......Page 997
--- in bulk materials, 279-282......Page 999
--- by spectroscopic ellipsometry, 282-283......Page 1002
--- microscopic roughness and dielectric function, 283-285......Page 1003
--- rotating analyzer technique, 285-286......Page 1005
--- phase-modulated, 286-287......Page 1006
--- in IR and deep UV regions, 287-290......Page 1007
--- and a-C:H films, 290......Page 1010
--- dielectric function, 291-292......Page 1011
--- graphitization during annealing, 292-293......Page 1012
--- dielectric function of amorphous material, 293-294......Page 1013
Tauc-Lorentz model, 294......Page 1014
--- in situ study, 298-303......Page 1018
--- 303-306......Page 1023
FTIR spectroscopic ellipsometry, 307-312......Page 1027
--- dielectric function, 312-313......Page 1032
--- optical response and stoichiometry, 313-316......Page 1033
stoichiometry, 316-317......Page 1036
--- electronic and microstructural features, 317-322......Page 1037
--- multiwavelength real-time ellipsometry, 322-324......Page 1042
--- oxidation study, 324-326......Page 1044
7. Summary and Conclusions 326......Page 1046
References 328......Page 1048
--- basic concepts, 332-333......Page 1052
--- of light by single film, 333......Page 1053
--- principles of, 334......Page 1054
--- single-wavelength device, 335-336......Page 1055
--- for in situ measurements, 336......Page 1056
--- external beam mount, 337......Page 1057
simulations of P-A trajectories, 338-341......Page 1058
341......Page 1061
342......Page 1062
--- fitting procedure, 343-344......Page 1063
Pseudosubstrate approximation, 344-346......Page 1064
--- oxidation and P-A trajectory, 346-347......Page 1066
--- for thick metallic layer, 355......Page 1075
4. Conclusions 365......Page 1085
366......Page 1086
367......Page 1087
Reflection coefficient of multilayer structures, 368-370......Page 1088
--- relationship of A and 9. to P and A, 370-371......Page 1090
References 372......Page 1092
Passivity, 373......Page 1093
--- crystalline, photochemistry, 376-381......Page 1096
Mott-Schottky equation, 377-379......Page 1097
--- photocurrent vs. potential curves, 379-381......Page 1099
Intensity-modulated phtocurrent spectroscopy (IMPS), 381......Page 1101
--- electronic properties in disordered films, 382-386......Page 1102
--- optical absorption and photoelectrochemical response, 386-393......Page 1106
--- photocurrent expression, 394-396......Page 1114
4. Quantitative Use of PCS for the Characterization of Passive Films on Metals and Alloys 399......Page 1119
--- optical absorption and photoelectrochemical response, 401-403......Page 1121
--- study of mixed oxides, 404--406......Page 1124
--- correlations for hydroxides and oxyhydroxides, 406--411......Page 1126
References 411......Page 1131
--- loss and EELS, 415......Page 1135
--- inelastic, 416......Page 1136
T matrix, 419-420......Page 1139
--- site expansion, 422-425......Page 1142
--- basic theory, 425-426......Page 1145
--- elastic, 426--427......Page 1146
427......Page 1147
--- and direct exchange effects, 429-430......Page 1149
--- and nonconservation of electrons, 430......Page 1150
--- relation to Francis-Watson potential, 432-433......Page 1152
--- comparison with GW approximation, 433......Page 1153
Quasi-boson approximation, 434......Page 1154
--- basic formulas, 441-443......Page 1161
--- suppression of loss structures, 443-444......Page 1163
--- multiple of photoelectrons, 444-447......Page 1164
--- multiple expansion of probe electron, 447-456......Page 1167
6. Thermal Effects on EELFS 456......Page 1176
--- perturbation approach, 457--465......Page 1177
--- path-integral approach, 465-471......Page 1185
--- spherical wave effects, 471-475......Page 1191
References 475......Page 1195
--- definition, 479......Page 1198
--- geometry, 480-481......Page 1199
Simply related structures, 481......Page 1200
--- for Xe films on Cu(100), 487......Page 1206
--- information from, 489......Page 1208
SPLEED (spin-polarized low-energy electron diffraction), 501......Page 1220
--- as three step process, 505-506......Page 1224
--- historical sketch, 507......Page 1226
--- Cu films on fcc Co(100), 516-522......Page 1235
References 524......Page 1243
1. Introduction 527......Page 1246
--- as substrates, 529......Page 1248
Snell\'s law, 530......Page 1249
--- surface diffraction, 531-532......Page 1250
geometry, 537-538......Page 1256
--- surface preparation, 538-539......Page 1257
--- MgO(001) surface preparation, 539-541......Page 1258
ot-A1203 (0001), 541-545......Page 1260
--- NiO(111), 545-549......Page 1264
--- COO(111), 549-553......Page 1268
--- Ag/MgO(001), 553-564......Page 1272
--- first stage formation, 564-567......Page 1283
Ni/MgO(001), 568-571......Page 1287
--- comparison of metal/MgO(001) interfaces, 571-572......Page 1290
5.1. Specific Considerations: Magnetism Versus Metal/Oxide 572......Page 1291
--- Co/NiO(111), 574-580......Page 1293
--- structure and growth vs. temperature, 580-582......Page 1299
--- growth on ot-A1203(0001), 585-589......Page 1304
--- growth on Au(111), 589-592......Page 1308
Acknowledgments 592......Page 1311
References 593......Page 1312
Vector light fields, interaction with nonlinear media, 598-599......Page 1317
Susceptibility, 599......Page 1318
Vector field polarization, 602-605......Page 1321
Probe wave density, 605......Page 1324
Saturation spectroscopy, 606......Page 1325
--- wave operator formalism, 608-609......Page 1327
--- reflection from media with LIA, 609-611......Page 1328
--- reflection configuration, 611-612......Page 1330
--- linearly and circularly polarized pump and probe waves, 612......Page 1331
--- elliptically polarized interacting waves, 615-616......Page 1334
--- probe wave polarization changes in MLIA, 616......Page 1335
--- nonlinear with nonlinear spectroscopic ellipsometry, 619......Page 1338
10.1. Real K 620......Page 1339
10.3. Non-Collinear EllipticaUy Polarized Pump Wave 621......Page 1340
--- method of combination waves, 624-628......Page 1343
11.2. Noncollinear Geometry of Interacting Waves 625......Page 1344
11.3. Informativeness of a Variant NSE Based on the Measurement of the Ratio of Eigenvalues of the Tensor of Parametric Coupling 627......Page 1346
Nonlinear optical ellipsometry, 628-629......Page 1347
--- nonlinear of isotropic medium with partially polarized light, 629-633......Page 1348
630......Page 1349
Spectroscopy of optical mixing (SOM), 631-632......Page 1350
Linear pumping, 632......Page 1351
--- nonlinear, methods for measuring, 633-634......Page 1352
References 634......Page 1353
ToF-SIMS (time-of-flight mass spectrometry), 638......Page 1356
--- basic characteristics, 639-640......Page 1357
TRIM-type codes, 640......Page 1358
2.4. Topographic and Compositional Damage During Bombardment 641......Page 1359
--- preferential during SIMS, 643-644......Page 1361
--- basics, 644-645......Page 1362
--- theory, 645......Page 1363
secondary ion optics, 646......Page 1364
--- electron gun and charge compensation, 647-648......Page 1365
648......Page 1366
--- peak interference, 649......Page 1367
--- theory, 650......Page 1368
--- computational models, 651......Page 1369
--- using relative sensitivity factors, 652-654......Page 1370
--- with secondary neutral mass spectrometry, 654-655......Page 1372
--- using encapsulation technique, 655......Page 1373
--- fundamental concepts, 656-657......Page 1374
--- quantitative methods, 657-659......Page 1375
--- calibration methods, 659-660......Page 1377
--- factors affecting depth resolution, 660-662......Page 1378
--- advantages, 664-665......Page 1382
--- by SIMS, 665-671......Page 1383
--- YBCO heterostructure interfaces, 668-669......Page 1386
--- proximity effect, 671......Page 1389
--- of diamond-like carbon films, 674-675......Page 1392
680......Page 1398
--- on Langmuir monolayer phases, 686......Page 1403
--- diagrams, 687-689......Page 1404
--- order parameters, 689-691......Page 1406
--- model building procedure, 691-695......Page 1408
Rotational potential, 692-694......Page 1409
Translational-rotational coupling, 694-695......Page 1411
Translational potential, 695......Page 1412
3.2. Orientational Instabilities 696......Page 1413
3.3. Thermoelastic and Structural Instabilities 699......Page 1416
--- illustration, 700-705......Page 1417
--- elastic dipoles and orientational fluctuations, 705-708......Page 1422
--- elastic domains in mesophases, 708-709......Page 1425
--- elastic dipole density correlation, 709-710......Page 1426
--- in quasi-two-dimensional system, 710-711......Page 1427
--- free energy parameters, 711-712......Page 1428
--- natural order parameters, 713-714......Page 1430
--- order parameter development at microscopic level, 715......Page 1432
6.2. The Orientational Entropy 716......Page 1433
--- swiveling transition, 717-718......Page 1434
--- internal stress effect, 718-719......Page 1435
--- extension of solid state theory, 720-722......Page 1437
--- X-ray scattering and Langmuir monolayers phases, 721-722......Page 1438
--- packing of model amphiphiles and fatty acids, 722......Page 1439
--- amphiphile cross section design and planar packing, 723......Page 1440
--- cross section potentials, 724-725......Page 1441
--- simulation of S to LS transition, 725-726......Page 1442
--- bead potentials, 726-728......Page 1443
9. Closing Remarks on the Solid-State Model for Langmuir Films 728......Page 1445
730......Page 1447
References 731......Page 1448
spin dynamics, 735-736......Page 1451
--- chemical shift interaction, 736-737......Page 1452
--- magic angle spinning technique, 739-740......Page 1455
--- quadrupole echo measurements, 740-741......Page 1456
--- recoupling of dipolar interaction, 741-742......Page 1457
--- on oriented biomembranes, 747-749......Page 1463
--- and structure of peptides and proteins, 749-751......Page 1465
--- dynamics, 751......Page 1467
--- in membranes, 755-757......Page 1471
--- and amyloid fibril formation, 757-758......Page 1473
References 759......Page 1475
Metal-oxide-semiconductor field effect transistor (MOSFET), 2......Page 1491
--- (MFISFETs), 5......Page 1494
--- high-dielectric-constant films and, 7-34......Page 1496
8......Page 1497
--- physical properties of, 10-14......Page 1499
2.4. Fabrication Processes of Ta 205 Thin Films 14......Page 1503
--- leakage current mechanisms of, 18-23......Page 1507
--- dielectric charges of, 23-31......Page 1512
--- dielectric reliability of, 31-34......Page 1520
Time-dependent dielectric breakdown (TDDB), 34......Page 1523
Trap-assisted tunneling, 35......Page 1524
--- C-V characteristics of, 37-39......Page 1526
--- MOSFETs and, 39-40......Page 1528
--- physical properties of, 40-44......Page 1529
--- fabrication processes of, 44-45......Page 1533
--- leakage current mechanisms of, 45-47......Page 1534
--- C-V characteristics of, 47-48......Page 1536
TTIP precursor, 48......Page 1537
--- dielectric reliability of, 49-50......Page 1538
--- aluminum oxide, 50......Page 1539
Yttrium oxide, 52-53......Page 1541
--- Zirconium oxide films, 53......Page 1542
hafnium oxide, 56-57......Page 1545
Lead zirconate titanate (PZT) films, 57......Page 1546
Magnetron sputtering, 58......Page 1547
59......Page 1548
67......Page 1556
Paraelectric films, 71......Page 1560
76......Page 1565
77......Page 1566
78......Page 1567
79......Page 1568
80......Page 1569
82......Page 1571
Strontium titanate, 83......Page 1572
Lead titanate (PT) films, 85......Page 1574
Lead lanthanum zirconate titanate (PLZT), 86-87......Page 1575
Triglycine sulfate (TGS), 87......Page 1576
--- nonvolatile memories, 89......Page 1578
Metal-ferroelectric-semiconductor field effect transistors (MFSFET), 90,......Page 1579
References 91......Page 1580
Ultralarge-scale integration (ULSI), 100......Page 1589
105......Page 1594
--- 106-107......Page 1595
Photon-induced chemical vapor deposition (PHCVD), 107......Page 1596
Sputtering, 108......Page 1597
109......Page 1598
Rapid thermal annealing (RTA), 111......Page 1600
123......Page 1612
DRAM cell applications, 129......Page 1618
136......Page 1625
Trench and stacked cells (STC), 140......Page 1629
Local oxidation structure (LOCOS), 141......Page 1630
--- long-through, 142......Page 1631
Optical properties, 143......Page 1632
Transmittance spectrum, 144......Page 1633
Tauc relation, 149......Page 1638
Semiconductor gas sensors, 151......Page 1640
--- BST films, 153-154......Page 1642
Thin film electroluminescent (TFEL) device, 154-157......Page 1643
Voltage tunable devices, 157-159......Page 1646
Yttrium iron garnet (YIG), 159......Page 1648
References 160......Page 1649
--- Si-based microelectronic devices, 169-225......Page 1657
Silicon wafer cleaning, 172-173......Page 1660
Thermal growth, of dielectrics, 173-174......Page 1661
Thermal processing, 174......Page 1662
Rapid thermal CVD (RTCVD), 176......Page 1664
--- physicochemical characterization of, 180-189......Page 1668
--- hydrogen and, 189-192......Page 1677
--- hydrogen-relate d issues, 192......Page 1680
Linear-parabolic growth law, 198-199......Page 1686
Ultrathin silicon oxide films, 204-205......Page 1692
--- gate dielectrics, 205-216......Page 1693
--- preparation methods, 206-207......Page 1694
Thermal nitridation, 207......Page 1695
--- physicochemical characteristics of, 209-214......Page 1697
214......Page 1702
Ultrathin silicon oxynitride films, 215-216......Page 1703
High-k films, 216-224......Page 1704
218......Page 1706
220......Page 1708
9. Final Remarks 224......Page 1712
References 225......Page 1713
piezoelectric properties and, 231......Page 1718
234......Page 1721
--- dielectric constant, 236-238......Page 1723
--- growth techniques, 238-241......Page 1725
--- growth techniques, 241-251......Page 1728
--- lead zirconate titanate, 251-254......Page 1738
254......Page 1741
X-ray analysis, 256......Page 1743
Selected area diffraction (SAED) patterns, 258-259......Page 1745
260......Page 1747
--- measurements on, 262-265......Page 1749
properties of, 266......Page 1753
267......Page 1754
291......Page 1778
References 304......Page 1791
fabrication of, 309-360......Page 1796
310......Page 1797
311......Page 1798
Thermal self-focusing, 316......Page 1803
pyroelectric coefficient, 317......Page 1804
318......Page 1805
--- ferroelectric oxide thin films, 326-333......Page 1813
--- ferroelectrics and, 333-338......Page 1820
339......Page 1826
344......Page 1831
--- ferroelectrics and, 351......Page 1838
358......Page 1845
5. Summary and Concluding Remarks 359......Page 1846
References 360......Page 1847
369......Page 1855
--- methoxyethanol route, 371......Page 1857
--- diol-based, 372-385......Page 1858
385......Page 1871
386......Page 1872
Young modulus, 388......Page 1874
--- causes and effects of, 390-392......Page 1876
Stresses, 394......Page 1880
References 395......Page 1881
Optical gain coefficients, 400-402......Page 1885
Vibronic lasers, 401......Page 1886
Low-penetrating particles, 402......Page 1887
403......Page 1888
Self-trapped exciton (STE), 404......Page 1889
--- growth of, 406......Page 1891
407......Page 1892
Single-crystal texture, 410......Page 1895
Waveguides, 411......Page 1896
412......Page 1897
13. Photoluminescence of Colored LiF Films 413......Page 1898
415......Page 1900
Optical phase conjugation, 416......Page 1901
17. Electron-Beam Lithography for Pattern Realization 418......Page 1903
--- Zero-phonon lines (ZPL), 420......Page 1905
Silicon-compatible photo-emission, 421......Page 1906
422......Page 1907
lasers based on, 424......Page 1909
426......Page 1911
21. Photoluminescence for Optical Microsystem Developments 428......Page 1913
Quenching effects, 429......Page 1914
References 430......Page 1915
433......Page 1917
Ultrasonic resonance, 435-436.......Page 1919
Periodically poled RTA (PPRTA), 436......Page 1920
437......Page 1921
Etching techniques, 440......Page 1924
--- polarization and, 442......Page 1926
Low coercive-field materials, 446--449......Page 1930
449......Page 1933
Proton-exchange (PE), 453......Page 1937
--- high-energy beam, 456-457......Page 1940
Laser-heated pedestal growth (LHPG) method, 457......Page 1941
461......Page 1945
473......Page 1957
References 475......Page 1959
Proof-of-concept (POC), 481......Page 1965
TBCCO compounds, 482......Page 1966
Weak links, 485......Page 1969
488......Page 1972
--- HTS, 493......Page 1977
500......Page 1984
501......Page 1985
Tunable components, 502-513......Page 1986
--- circuit prototypes, 507-513......Page 1991
Thin-film phase shifters, 513......Page 1997
References 514......Page 1998
Twinning, 517-543......Page 2001
2.1. Crystallography of Polydomain Formation 521......Page 2005
522......Page 2006
Stability maps, 524......Page 2008
Tetragonality, 525......Page 2009
Polytwin architecture, 527-528......Page 2011
528......Page 2012
Threading dislocations, 529......Page 2013
530......Page 2014
--- 532......Page 2016
Rocking curves, 533......Page 2017
--- polydomain structures, 535-536......Page 2019
--- of polydomain structures, 536-537......Page 2020
Three-domain architecture, 537-539......Page 2021
539......Page 2023
540......Page 2024
Appendix      541......Page 2025
542......Page 2026
546......Page 2029
Vinylidene fluoride copolymers, 551......Page 2034
555......Page 2038
Suminagashi art, 556......Page 2039
557......Page 2040
Langmuir-Schaefer method, 559......Page 2042
560......Page 2043
561......Page 2044
Stiffening transition, 564......Page 2047
Pyroelectric scanning microscopy (PSM), 565......Page 2048
566......Page 2049
570......Page 2053
575......Page 2058
576......Page 2059
579......Page 2062
4.6. Surface Phase Transition 581......Page 2064
582......Page 2065
Stark spectroscopy, 584-586......Page 2067
586......Page 2069
Wide-band imaging, 587......Page 2070
588......Page 2071
593......Page 2075
Optical response problem, 594......Page 2076
Light-matter interaction, 596-598......Page 2078
Transmitted waves, 599-606......Page 2081
Nonnormal incidence, 606-607......Page 2088
1.6. The Effect of a Thick Substrate 607......Page 2089
--- computational, 609-610......Page 2091
Optimization algorithm, 610......Page 2092
614......Page 2096
3. Conclusions 620......Page 2102
621......Page 2103
References 622......Page 2104
--- Thermal oxidation, IrO 2......Page 2119
Working electrode (WE), 3......Page 2120
6......Page 2123
Shockley-Read-Hall (SRH)recombination, 9......Page 2126
--- electrochemically hydrogenated surfaces, 12-22......Page 2129
HF solutions, diluted, electrochemical hydrogenation in, 13-16......Page 2130
16......Page 2133
electronic states at, 17-19......Page 2134
surface state formation, role of etch rate, 19-21......Page 2136
surface state origin, local reconstruction and, 21-22......Page 2138
--- porous, 22-31......Page 2139
--- ultrathin, pH dependence of formation of, 23-26......Page 2140
Electropolishing, competition with hydrogenation, 26-29......Page 2143
--- electronic states at internal surfaces of, 29-31......Page 2146
--- on Si, 31-46......Page 2148
5.2. Passivation by Electron Injection at Cathodic Potentials 34......Page 2151
--- by process optimization at anodic potentials, 36-40......Page 2153
Oxides, formation in alkaline solution, 40-41......Page 2157
Low thermal budget processing, anodic oxides, 41-42......Page 2158
--- preparation of, in thick anodic oxides, 42-43......Page 2159
--- electronic characterization, 43-44......Page 2160
--- steps and trenches, 44--45......Page 2161
--- enhanced, SiGe, 46-51......Page 2163
Oxidized epi-SiGe samples, morphology of, 48......Page 2165
Photoluminescence spectra, oxidized SiGe layers, 50-51......Page 2167
7.5. Conclusions and Outlook 51......Page 2168
References 52......Page 2169
--- epitaxial growth and structure of, 57-115......Page 2174
--- GaN thin-film growth, 59......Page 2176
--- A1N bulk crystals and, 60......Page 2177
Metal organic vapor phase epitaxy (MOVPE), 62......Page 2179
--- use in MBE, 64......Page 2181
Homoepitaxial growth, GaN, 67-68......Page 2184
--- GaN in, 68-86......Page 2185
--- doping of, 87-90......Page 2204
--- n-type, GaN, 88-89......Page 2205
--- p-type, GaN, 89-90......Page 2206
InGaN films, doping of, 90......Page 2207
Residual stresses, epitaxial films, 91-92......Page 2208
Polarity, GaN, 92-95......Page 2209
Polytype defects, GaN, 95-96......Page 2212
--- dislocations, 96-100......Page 2213
--- Ternary alloys, 100......Page 2217
--- growth of epitaxial A1GaN, 108-109......Page 2225
References 111......Page 2228
--- historical perspectives and economics, 118-120......Page 2234
1.2. Challenges in Nitride Thin Film Research and Development 120......Page 2236
--- physical properties and band structure, 121-122......Page 2237
--- group III nitrides, 122-123......Page 2238
Strain considerations, group III nitrides, 123......Page 2239
Reflection, group III nitrides, 124-125......Page 2240
Pump-probe spectroscopy, highly excited group III-nitrides, 125-137......Page 2241
Single-beam power-dependent absorption spectroscopy, GaN thin films, 126......Page 2242
Nanosecond experiments, nonzero time delay, GaN thin films, 129-131......Page 2245
Femtosecond experiments, nonzero time delay, 131-134......Page 2247
Pump-probe reflection spectroscopy, GaN thin films, 134......Page 2250
Pump-probe absorption spectroscopy, InGaN thin films, 135-136......Page 2251
3.8. Summary 136......Page 2252
--- lasing structures, gain mechanisms in, 137-147......Page 2253
--- origin in GaN epilayers, 138-141......Page 2254
--- heterostructures, 141-145......Page 2257
--- AiGaN thin films, 145-147......Page 2261
--- optical properties of, 147-166......Page 2263
--- fundamental optical properties, 149-153......Page 2265
InGaN layers, effects of In composition, 153-154......Page 2269
--- doping, effects in GaN barriers, 154-157......Page 2270
--- various temperatures and excitation conditions, 157-159......Page 2273
--- excitation condition dependence of, 159-163......Page 2275
--- excited length dependence of, 163-164......Page 2279
5.8. Summary of Optical Properties of InGaN 165......Page 2281
--- damage mechanisms in GaN epilayers and, 166-169......Page 2282
--- InGa/GaN MQW, 169-172......Page 2285
surface-emitted, in GaN epilayers, 172-178......Page 2288
--- lasing characteristics, microcrack effects, 174-175......Page 2290
Ring-cavity lasing, laterally overgrown GaN pyramids, 175-178......Page 2291
Wide-bandgap semiconductors, imaging techniques for, 178-182......Page 2294
Optical confinement, evaluation in GaN-based lasing structures, 179-182......Page 2295
9. Summary 182......Page 2298
References 183......Page 2299
Lateral resistivity, 187......Page 2303
Zinc-blende structure, 189......Page 2305
190......Page 2306
193......Page 2309
195......Page 2311
198......Page 2314
--- band structure, 202......Page 2318
--- cadmium, 208......Page 2324
High field direct current conductivity, cadmium, 220......Page 2336
Alternating current conductivity, cadmium, 235......Page 2351
242......Page 2358
Acknowledgments 243......Page 2359
References 244......Page 2360
--- heteroepitaxial, 247-290......Page 2362
--- epitaxial, 248......Page 2363
Surface solubility, carbon, 249......Page 2364
--- substitutional versus interstitial C incorporation, 250......Page 2365
Carbon-containing complexes, segregation of, 253......Page 2368
--- substitutional incorporation, 254......Page 2369
Strain manipulation, Si/Ge, 256......Page 2371
Microscopic structure, Si/Ge alloys, 257......Page 2372
Strain-compensated ternary alloys, 260......Page 2375
--- carbon-containing silicon films, 261......Page 2376
--- ternary alloys, 265......Page 2380
--- relaxed Si buffer structures, 266......Page 2381
Carbon-containing alloys, electrical properties, 268......Page 2383
Charge transport, carbon-containing silicon films, 273......Page 2388
Pseudomorphic layers, 277......Page 2392
Silicon, formation of a carbon-rich surface, 278......Page 2393
Carbon-containing thin films, device application, 280......Page 2395
Boron diffusion, carbon effect, 281......Page 2396
--- carbon containing silicon films, 282......Page 2397
285......Page 2400
--- modular integration in a CMOS platform, 288......Page 2403
--- low-frequency noise spectroscopy for, 291-325......Page 2406
--- in semiconductors, 292-293......Page 2407
--- in MOSFETs, 293-294......Page 2408
--- noise of, 294-298......Page 2409
Polycrystalline/3-FeSi2 films, noise in, 296-298......Page 2411
--- noise of the drain current in, 298-313......Page 2413
--- inhomogeneities, 300-302......Page 2415
Interface trap characterization, noise spectroscopy for, 302-304......Page 2417
--- verification of, 304-307......Page 2419
--- excimer laser-annealed, 307-308......Page 2422
Static device parameters, noise correlation, 308-311......Page 2423
--- very thin, noise of, 311-313......Page 2426
--- leakage current in, noise of, 313-318......Page 2428
4.3. Noise Measurements 316......Page 2431
--- avalanche-induced excess noise, 318-320......Page 2433
--- hot-cartier phenomena in, 320-323......Page 2435
7. Concluding Remarks 323......Page 2438
References 324......Page 2439
--- Ge thin films on Si for, 327-367......Page 2441
Near-infrared detectors, 329-330......Page 2443
--- technology, 330-346......Page 2444
--- near-infrared detection, 332-333......Page 2446
--- relaxed films, 333-346......Page 2447
--- epitaxial pure, growth on Si, 338-343......Page 2452
--- early devices, 346......Page 2460
--- work at Bell Labs, 347-349......Page 2461
Superlattice detectors, short period, GeSi, 349......Page 2463
Silicon/germanium/carbon (SiGeC), 351......Page 2465
Low-temperature buffer, near-infrared detection, 352......Page 2466
--- undulating layers, near-infrared detection, 354......Page 2468
--- detectors, 355-356......Page 2469
Voltage tunable detectors, SiGe on Si, 356-358......Page 2470
4.2. Array of NIR Photodetectors 358......Page 2472
Wavemeter, near-infrared, integrated on Si, 359-361......Page 2473
--- Ge/Si, relaxed, 361-364......Page 2475
Heterointerfaces, Ge/Si, relaxed, electric equivalent of, 362-363......Page 2476
Current-voltage, Ge/Si heterojunctions, 363-364......Page 2477
References 365......Page 2479
--- physical properties, 369-401......Page 2482
--- deposition of GaAs, 370......Page 2483
Flash evaporation, deposition of GaAs, 373......Page 2486
--- , Plasma enhanced chemical transport deposition (PECTD), GaAs, 374-375......Page 2487
--- GaAs properties, 375-376......Page 2488
--- density of states, 379-385......Page 2492
4.2. Experimental Results 383......Page 2496
385......Page 2498
--- phonon spectra, 388-391......Page 2501
389......Page 2502
--- electrical transport properties, 391-398......Page 2504
--- 395-397......Page 2508
7.3. Other Methods of Deposition 397......Page 2510
--- applications, devices, 398-399......Page 2511
9. List of Symbols 399......Page 2512
References 400......Page 2513
--- Tetrahedral amorphous carbon (TAC), 404......Page 2516
Diamond, allotropic form of carbon, 405-406......Page 2517
--- historical perspective, 408......Page 2520
--- a-C, 409-411......Page 2521
Plasma beam source, a-C, 416......Page 2528
--- a-C microstructure, 420--422......Page 2532
computer modeling of growth and structure, 424--432......Page 2536
--- optical properties, 432-455......Page 2544
Infrared absorption studies, a-C, 435-441......Page 2547
--- FTIR studies, 441......Page 2553
--- a-C thin films, 446--455......Page 2558
--- defect studies, 455-467......Page 2567
Relaxation, effects on a-C, 456......Page 2568
g values, a-C, 457-458......Page 2569
Spin densities, a-C, 458-460......Page 2570
460......Page 2572
Nitrogenation, effects on a-C, 463-464......Page 2575
Annealing, effects on a-C, 464-465......Page 2576
Photoyield measurements, defects in a-C, 465-467......Page 2577
--- defects in a-C and, 467......Page 2579
--- electronic band structure of, 468......Page 2580
Low field conduction, a-C, 469-470......Page 2581
Space-charge-limited current (SCLC), 470......Page 2582
--- Tunnelling, 471......Page 2583
--- electronic properties, 472-473......Page 2584
Deposition parameters, a-C, 473-475......Page 2585
--- electronic properties, 475-478......Page 2587
--- hydrogenated, in situ doping of, 478-480......Page 2590
6.11. Summary 481......Page 2593
--- in a-C, 482-484......Page 2594
Ion implantation, a-C, 483-484......Page 2595
Electron field emission, a-C, 484--499......Page 2596
Planar emitter structures, based on carbon, 486--492......Page 2598
NAC films, electron field emission properties of, 492......Page 2604
--- as a function of surface modifications, 496-499......Page 2608
9.1. Electronic Devices 498......Page 2610
Electronic devices, a-C-based, 499......Page 2611
Solar cells, a-C-based, 500-501......Page 2612
References 501......Page 2613
High-Tc superconductor (HTSC), 507-624......Page 2619
--- fabrication of thin films, 509-521......Page 2621
Sol-gel method, fabrication of HTSC thin films, 518......Page 2630
--- preparation and characterization, 522-528......Page 2634
--- fabrication of BCCO thin film, 538-539......Page 2650
La2CuO4 system thin films, 543-547......Page 2655
High-Tc superconductor (HTSC), Tl-based, 547-552......Page 2659
--- fabrication, 552-554......Page 2664
Infinite CuO2 layer films, 554-560......Page 2666
--- fabrication of BKBO system thin films, 560-561......Page 2672
C60 film, 563-564......Page 2675
Ultrathin films and multilayers, 564-570......Page 2676
Large-area thin films, 570-576......Page 2682
--- transport properties for, 576--594......Page 2688
Normal-state resistivity, HTSCs, 577-580......Page 2689
--- optical properties, 590-594......Page 2702
--- superconducting quantum interferences devices and, 594-598......Page 2706
Microwave devices, HTSC, 598-604......Page 2710
--- HTSC/FE heterostructures, 605......Page 2717
--- S/F/M/S, 610-611......Page 2722
7. Conclusion 613......Page 2725
References 614......Page 2726
--- groups IV and III-V materials, 625-648......Page 2737
Strain tensor, 627......Page 2739
--- indirect conduction-band minima, 628-629......Page 2740
--- Tight-binding model, strained semiconductor films, 629-630......Page 2741
strained, 630-632......Page 2742
--- Si, 632......Page 2744
--- Ge, 633-634......Page 2745
--- Ge, 634-635......Page 2746
Silicon-germanium alloys, strained, 635-637......Page 2747
--- optical properties, 636-637......Page 2748
--- optical properties, 637-638......Page 2749
Silicon-germanium superlattices, 638-641......Page 2750
--- interface intermixing, 640-641......Page 2752
GaAs, strained, 641-642......Page 2753
InP, strained, 642......Page 2754
--- electronic properties, 644-645......Page 2756
--- optical properties, 645......Page 2757
References 646......Page 2758
--- hydrogenated, 649-698......Page 2761
Diamond-like carbon (DLC), 650......Page 2762
--- film deposition, 651-654......Page 2763
--- nitrogen in, 654-663......Page 2766
3.2. Nitrogen Incorporation and Growth Kinetics 655......Page 2767
3.3. Plasma and Surface Processes Affecting Film Growth 658......Page 2770
3.4. Modeling of a-C(N):H Film Growth 661......Page 2773
--- a-C(N):H film structure, 663-665......Page 2775
Infrared spectroscopy, a-C(N):H film structure, 665-666......Page 2777
--- a-C(N):H, 666-669......Page 2778
Nuclear magnetic resonance spectroscopy, a-C(N):H, 669......Page 2781
Hardness and stress, a-C(N):H, 670--672......Page 2782
--- optical and electrical properties, 672-675......Page 2784
6.1. Optical Properties and Electron Spin Resonance 673......Page 2785
6.2. Electrical Properties 674......Page 2786
References 675......Page 2787
--- different materials, 677-678......Page 2789
--- figure of merit for, 678-679......Page 2790
--- deposition techniques, 679-681......Page 2791
--- epitaxial growth, 681-682......Page 2793
682......Page 2794
--- epitaxial growth, 683-685......Page 2795
--- etching, 685-686......Page 2797
686......Page 2798
--- deposition techniques, 688-691......Page 2800
--- applications, 689-691......Page 2801
Ruthenates, conductive, 691......Page 2803
--- deposition techniques, 692-695......Page 2804
--- oriented films on SiO2/Si, 693-694......Page 2805
--- applications, 695......Page 2807
References 696......Page 2808
X-ray lithography, 2......Page 2820
Surface probe methods, 3......Page 2821
5......Page 2823
Silicon technology, 7......Page 2825
8......Page 2826
9......Page 2827
Step-and-stamp procedure, 12......Page 2830
Uniformity, 17......Page 2835
Rheological behavior, 23......Page 2841
Single-layer schemes, 27......Page 2845
X-ray stepper, 29......Page 2847
Wafer-scale embossing, 30......Page 2848
Trenches, 31......Page 2849
UV lithography, 32......Page 2850
33......Page 2851
Step-and-flash imprint lithography, 34......Page 2852
--- configurations, 35......Page 2853
--- grids, 36......Page 2854
--- chemical process, 37......Page 2855
UV molding, 38......Page 2856
39......Page 2857
40......Page 2858
41......Page 2859
--- wear, 43-45......Page 2861
45......Page 2863
--- effects, 46......Page 2864
Spin coated antisticking layers, 49......Page 2867
X-ray photoelectron spectroscopy, 52......Page 2870
Plasma polymerized layers, 53......Page 2871
Zankovych, S., 54......Page 2872
Waveguide polarizer, 55......Page 2873
Montelius, L., 56......Page 2874
57......Page 2875
Valence band, 62......Page 2880
Transverse-acoustic phonons, 63......Page 2881
Unsaturated bonds, 64......Page 2882
Vertical detachment energies, 66......Page 2884
Time-resolved fluorescence measurement, 67......Page 2885
Vanadium clusters, 68......Page 2886
Van der Waals, 71......Page 2889
Weller, H., 72......Page 2890
Williamson, A. J., 73......Page 2891
Unpassivated silicon particles, 76......Page 2894
Spherical cluster, 77......Page 2895
Zero energy gaps, 79......Page 2897
--- passivated, 80-81......Page 2898
81......Page 2899
82......Page 2900
Superconductivity, 83......Page 2901
85......Page 2903
Transcendental equation, 86......Page 2904
Tunneling currents, 87......Page 2905
Single-electron transistors, 88......Page 2906
89......Page 2907
90......Page 2908
--- type II, 99......Page 2916
Zinc-blende semiconductors, 100......Page 2917
Wave function symmetry, 103......Page 2920
--- nonexponential, 107......Page 2924
Wolford, D. J., 111......Page 2928
116......Page 2933
Zero-phonon peak, 121......Page 2938
--- Raman, 127......Page 2944
130......Page 2947
Valence band energy, 133......Page 2950
Ulrich, J., 138......Page 2955
141......Page 2957
--- ferromagnetic, 143......Page 2959
Wigen, R. E., 144......Page 2960
147......Page 2963
Spronken, G., 150......Page 2966
--- Fibonacci, 151......Page 2967
Atomic Heisenberg model, 153......Page 2969
4. Discussion 161......Page 2977
--- damping effect, 164......Page 2980
References 165......Page 2981
--- semiempirical, 170......Page 2986
--- infinitely deep wells, 171......Page 2987
173......Page 2989
Total energy calculations, 174......Page 2990
Sd-mixing model, 175......Page 2991
Spin-up and spin-down electrons, 176......Page 2992
177......Page 2993
178......Page 2994
179......Page 2995
Spin-dependent scattering, 186......Page 3002
6.3. Numerical Results 187......Page 3003
Quantization condition, 190-192......Page 3006
192......Page 3008
7.2. Model and Analytical Results 193......Page 3009
Metal-vacuum interface, 194......Page 3010
197......Page 3013
198......Page 3014
199......Page 3015
Appendix C 200......Page 3016
Appendix F 201......Page 3017
Appendix H 202......Page 3018
References 203......Page 3019
--- definition, 208......Page 3024
209......Page 3025
210......Page 3026
212......Page 3028
Single heterostructure, 213-214......Page 3029
214......Page 3030
218......Page 3034
--- dispersion relations, 219-222......Page 3035
222......Page 3038
quasi-particle states, 223-237......Page 3039
Wannier function, 224......Page 3040
226......Page 3042
227......Page 3043
--- realistic, 233-237......Page 3049
237......Page 3053
5.2. Effect of Static External Magnetic Field on the Quasi-Particle Energy Levels in the Q2D Structures 241......Page 3057
--- lattice dynamics, 245-259......Page 3061
246......Page 3062
248......Page 3064
Gauss theorem, 249......Page 3065
--- polaron properties, 253-259......Page 3069
260......Page 3076
--- vertical transport, 279-281......Page 3095
281......Page 3097
Quantized Hall effect, 284-285......Page 3100
Time-resolved spectroscopy, 287......Page 3103
Electron-photon interaction, 288-290......Page 3104
296......Page 3112
301......Page 3117
308......Page 3124
9.1. Model and Applied Theory 309......Page 3125
9.2. Electron Raman Scattering in a Quantum Well 310......Page 3126
9.3. Resonant Raman Scattering in Quantum Wells in High Magnetic Fields: Frrhlich and Deformation Potential Interaction 313......Page 3129
327......Page 3143
Impurity wavefunction, 328......Page 3144
References 331......Page 3147
Nanophase composite films, 337-372......Page 3152
Tunneling magnetoresistance, 338......Page 3153
--- magnetization processes, 339......Page 3154
Thickness, 344......Page 3159
354......Page 3169
--- formation, 355-356......Page 3170
3.3. Cluster-Assembled Magnetic Films 361......Page 3176
Nanocomposite hard magnetic films, 364-372......Page 3179
4.2. Epitaxial CoSm/Fe (or Co) Multilayers 365......Page 3180
--- rapid thermally processed, 366-367......Page 3181
371......Page 3186
References 372......Page 3187
--- magnetic, 375-433......Page 3190
Magnetic states of matter, 379......Page 3194
--- soft magnetic, 385......Page 3200
388......Page 3203
Surface anisotropy, 389......Page 3204
Exchange anisotropy, 391-396......Page 3206
Domain wall, 396-402......Page 3211
Magnetization reversal, 402......Page 3217
Vibrating sample magnetometer, 407......Page 3222
3.2. Magneto-Optical Methods 408......Page 3223
Magnetic force microscopy, 412......Page 3227
413......Page 3228
--- dc diode, 416......Page 3231
421......Page 3236
--- reactive ion, 422......Page 3237
Magnetic sensors, 423......Page 3238
Magnetorestrictive pressure sensor, 430......Page 3245
Inductive write heads, 431......Page 3246
Acknowledgments 433......Page 3248
References 434......Page 3249
Notation 440......Page 3254
--- magnetotransport effects, 441-491......Page 3255
Spectroscopic splitting factor, 443......Page 3257
Impurity concentration, 445-446......Page 3259
--- in electric fields, 446--448......Page 3260
scattering mechanisms of charge carriers, 449--457......Page 3263
--- by dislocations, 457......Page 3271
459......Page 3273
Lorentz force, 461......Page 3275
Righi-Leduc effect, 463-464......Page 3277
Magnetoresistance, 464......Page 3278
465......Page 3279
--- longitudinal, 466......Page 3280
Schrnwald, H., 467......Page 3281
--- quantum effects in large magnetic fields, 468......Page 3282
Shubnikov-de Haas oscillation, 469-471......Page 3283
Freeze-out effects, 471-472......Page 3285
Magnetophonon effect, 472-474......Page 3286
474......Page 3288
6.1. Magnetotransport in Two-Dimensional Systems at Low Fields 475......Page 3289
Heterojunction interface, 476......Page 3290
6.4. Mobility and Scattering Mechanisms in Two-Dimensional Systems 477......Page 3291
--- integer, 480--482......Page 3294
Van der Pauw method, 484-485......Page 3298
485......Page 3299
7.3. Inhomogeneity and Effective Sample Thickness 486......Page 3300
--- geometric, 487......Page 3301
Nonuniform materials, 488-489......Page 3302
7.8. Experimental Configurations 489......Page 3303
References 491......Page 3305
--- for high-density magnetic recording, 495-550......Page 3309
Four-point probe, 497-498......Page 3311
Schematic frequency permeameter, 498-499......Page 3312
Write/read process, 499......Page 3313
Write field, 500......Page 3314
Transition self-demagnetization limit, 502......Page 3316
Vacuum sputtering, 507......Page 3321
MH loop, 511-512......Page 3325
Signal decay measurement, 514......Page 3328
517......Page 3331
Exchange-biased spin-valve films, 526-531......Page 3340
Spin valve head engineering, 531-538......Page 3345
Write heads, 538-550......Page 3352
Yoke inductance, 540-541......Page 3354
5.3. Magnetic Domain Configurations in Film Heads 543......Page 3357
547......Page 3361
550......Page 3364
--- spectra, 555......Page 3368
Nuclear shell model, 556......Page 3369
Larmor frequency, 560......Page 3373
Thin film characterization, 568......Page 3381
571......Page 3384
6. Nuclear Resonance Spectroscopy in Amorphous, Nanostructured, and Granular Films 578......Page 3391
Acknowledgments 585......Page 3398
References 586......Page 3399
--- superconducting, 590-615......Page 3402
--- low-temperature, 591......Page 3403
Faraday rotation, 592......Page 3404
AC susceptibility measurement, 593-594......Page 3405
YBCO thin film, 594......Page 3406
Infinitely long strip, 595......Page 3407
--- current-induced, 596-597......Page 3408
597......Page 3409
--- after field cooling, 598-599......Page 3410
Self-consistent iteration procedure, 599......Page 3411
Meissner currents, 602-603......Page 3414
Vortex penetration front, 603......Page 3415
Flux penetration, 604......Page 3416
Grain boundary, 606......Page 3418
Augsburg, University of, 607......Page 3419
Konstanz, University of, 608......Page 3420
609......Page 3421
610......Page 3422
Meissner state, 611......Page 3423
--- of superconducting thin films, 612......Page 3424
613......Page 3425
614......Page 3426
--- YBCO thin films, 615......Page 3427
--- applications, 5......Page 26
Acid solutions, electrodeposition, 290-293......Page 309
Photoreceptors, 87......Page 108
Mechanical interlocking, adhesion and, 241-242......Page 260
Thermosonic wire bonding, 242-244......Page 261
Unreactive byproducts, ALD precursors, 120-121......Page 141
Alkaline solutions, electrodeposition, 289-290......Page 308
Alloy evaporation, Pilyankevich et al. experiments, 636--639......Page 652
Alloy films, mechanism of composition formation, 646-647......Page 662
Superstructures, 265......Page 284
Staebler-Wronski effect (SWE), 6......Page 27
Pourbaix\'s equilibrium diagram applied to, 272......Page 291
carbon films, 227-229......Page 246
--- 513-515......Page 530
--- amorphous carbon films sputter deposited on biased substrates, 517-519......Page 534
Methods of deposition, hydrogenated amorphous silicon, 1-102......Page 22
Antibody films, 540-542......Page 557
--- 610-611......Page 626
--- ration of growth rate to steady-state nucleation rate, 348-349......Page 367
X-ray scattering, studying LB films, 530......Page 547
Film properties, ALD, 141-144......Page 162
Self-decomposition, stability against, ALD precursors, 119......Page 140
Atomic vacancies, cold plasma treated graphite surface, 256-257......Page 275
Atoms, kinetic energy, effects on substrates and film surfaces, 463-465......Page 480
XPS, 150......Page 171
Electrochemical synthesis, thin films, 261-318......Page 280
Energy balances, 23......Page 44
Simulation results, 25......Page 46
--- ejected from graphite target, 512-513......Page 529
Carbon nanotubes (CNT), 234-236......Page 253
81......Page 102
Charge exchange, 47......Page 68
--- reactions, 50......Page 71
--- 699......Page 714
20......Page 41
X-ray sensor, 88......Page 109
--- ALD versus, 107......Page 128
Diamond films, cold plasma in, 229-230......Page 248
--- graphite, 255-257......Page 274
--- accumulated number concentration of, 336......Page 355
343......Page 362
--- fractal dimension, 339-340......Page 358
Effective dimension, determination of, 341-342......Page 360
--- effective dimension, 340-341......Page 359
344......Page 363
--- enthalpic and entropic barriers to, 350--351......Page 369
Complex lipid-protein monolayers, 535-537......Page 552
Compound films, mechanism of composition formation, 647--648......Page 663
--- 639-642......Page 655
--- 642--643......Page 658
--- amorphous carbon film characteristics, 516-517......Page 533
Nucleation rate, 334......Page 353
--- size distribution of clusters far beyond, 332-333......Page 351
--- size distribution of clusters in, 328-330......Page 347
Delamination of films, 481......Page 498
Deposition systems, control in, 363-366......Page 382
Diffusion field in the size space, 324-325......Page 343
Discharge analysis, 72......Page 93
46......Page 67
Ion beam sputtering, 469......Page 486
--- for, 131-133......Page 152
17......Page 38
Surface free energy, 480......Page 497
Rutherford backscattering spectrometry (RBS), 7......Page 28
--- electrical properties, 201......Page 221
206......Page 226
Lorentz approximation, 24......Page 45
Transport, r 4......Page 25
Infrared spectroscopy, studying LB films, 531......Page 548
--- produced from energetic particles, 487-490......Page 504
Growth, energy barrier to, 351......Page 370
Enzyme films, 542-543......Page 559
--- epitaxial growth by PLD, 183......Page 203
Erbium, a-Si:H, 90......Page 111
Growth precursors, 19......Page 40
--- target effects during evaporation, 644-645......Page 660
FeCo(100) surfaces, critical phenomena, 621-622......Page 637
Final grain size, 337-338......Page 356
--- high surface area, ALD reactors, 147-149......Page 168
--- fluorinated monomer coatings, 238-240......Page 257
Fromherz trough, 536......Page 553
Scaling laws, 16......Page 37
Nonenergetic particles, films produced from, intrinsic stresses in, 485-487......Page 502
Sputter-deposited Tungsten films, adaptation of GBR model to, 486-487......Page 503
--- coarsening of, 357......Page 376
Grazing incidence X-ray diffraction (GIXRD), ITO films, 181......Page 201
346......Page 365
High-power-long-pulse laser, target effects of evaporation, 645-646......Page 661
Hybrid particle-in-cell/Monte Carlo-fluid model, 34......Page 55
Thermal reactions, 66......Page 87
Metal-insulator-semiconductor (MIS), 89......Page 110
--- incident energetic particle effects, 461-462......Page 478
--- momentum transfer effects, 465-467......Page 482
--- electronic transport properties, 199-200......Page 219
--- laser-irradiated ITO films, 203......Page 223
207......Page 227
Strain, effects on structure of ITO films, 180-183......Page 200
Inhomogeneous nonequilibrium process, kinetic description, 325-326......Page 344
--- 12......Page 33
In situ synthesized precursors, ALD, 123-124......Page 144
Neutron scattering, studying LB films, 532......Page 549
Intrinsic stress model (Davis), 489-490......Page 506
Thermal evaporation, 467......Page 484
Superparticles, 37......Page 58
--- kinetic energy, 57......Page 78
--- material quality, 58......Page 79
Ion-induced dehydrogenation, 56......Page 77
--- detection of, 45......Page 66
Ion-surface interactions, 62......Page 83
Tunneling spectroscopy, UPd 2A13, 609-610......Page 625
Large reactor, comparison with experiments, 32......Page 53
--- laser applications in, 161-217......Page 181
Light-sensitive protein films, 539-540......Page 556
Low-melting-point semiconductor compounds and oxides, 632-634......Page 648
Luminescent thin films, made by ALD for TFEL devices, 127......Page 148
--- under focused irradiation, 664......Page 680
Single source precursors, ALD, 124......Page 145
Metal--organic chemical vapor deposition (MOCVD), 84......Page 105
Metal precursors, ALD, 122-123......Page 143
Photodiode arrays, 91......Page 112
--- early growth stages, 595-599......Page 611
--- high vapor pressure materials, 599-601......Page 615
Morphological properties, PLD ITO films, 179-180......Page 199
Threshold ionization mass spectrometry (TIMS), 44......Page 65
--- kinetic description, 326-327......Page 345
Nucleation equation, limit of the new kinetic description, 327-328......Page 346
nonclassical model for, 322-323......Page 341
185......Page 205
Particle fluxes, 22......Page 43
Perpendicular magnetic anisotropy, TbFe2 with, 614-615......Page 630
Photosynthetic reaction center (RC), films of, 534......Page 551
--- modes of failure, 479-480......Page 496
--- water molecules or other polar species and, 491-492......Page 508
Plane-stress elastic model, 475-476......Page 492
Plasma chemical diffusion treatments, 251-252......Page 270
Self-bias, in cold plasmas, 223......Page 242
Plasma potential Vp, in cold plasmas, 222-223......Page 241
Source power, 26......Page 47
--- variation, 29......Page 50
Polymers, plasma treatment of, 244-251......Page 263
Purge length, ALD, 140-141......Page 161
--- combinations, 114-119......Page 135
Pressure variation, 27......Page 48
--- with volatile components, 648-650......Page 664
Quasi-rest potentials, in codeposition, 267-270......Page 286
Reaction chamber, in ALD reactors, 110-112......Page 131
--- MBE growth of intermetallic compounds, 591-592......Page 607
Reversed micelle monolayers, 537-538......Page 554
RF frequency variation, 28......Page 49
--- MBE growth of intermetallic compounds, 592......Page 608
Silane-argon discharges, 48......Page 69
49......Page 70
--- with the hybrid model, simulation of RF, 35......Page 56
--- exposed to room air, kinetics, 502-505......Page 519
--- origin of, 499-502......Page 516
--- normalized momentum effects, 506-507......Page 523
--- characteristics of, 508-509......Page 525
--- origin of, 509-510......Page 526
--- 476--477......Page 493
Solar cells, 82-92......Page 103
Transparent conducting oxide (TCO), 83......Page 104
stability, 85......Page 106
--- composition, 353-354......Page 372
Sputtering, 468......Page 485
States of starting materials, 354-357......Page 373
--- temperature, 54......Page 75
--- effects on electrical properties of films, 187-188......Page 207
Transformed fraction, 335......Page 354
size distribution of clusters in, 331-332......Page 350
Thin film transistors (TFT), 86......Page 107
Thornton structure-zone diagram, 460......Page 477
Transformation of starting thin films, control in, 366-369......Page 385
Wilhelmy balance, 525......Page 542
--- microstructure of electrodeposits, 575......Page 591
--- bias and surface quality, 301-302......Page 1021
BEMT, and a-C:H films, 299......Page 1019
280......Page 1000
--- growth during Ag/MgO(001) formation, 561-564......Page 1280
--- thick Ag films on MgO(001), 557-561......Page 1276
Tetratetracontane band structure, 95-96......Page 816
--- reconstructed surface, 542-545......Page 1261
p-Sexiphenyl band structure, 94......Page 815
Mobility gap, 383......Page 1103
--- geminate recombination effects, 388-390......Page 1108
Angle-resolved inverse photoelectron spectroscopy, 484......Page 1203
--- modes, 506......Page 1225
PTCDA band structure, 93......Page 814
Halogens, in diamond film deposition, 125......Page 846
--- in absorbing rarer medium, 198-199......Page 919
--- light absorption, 207-208......Page 928
--- spatial distribution of island-island distances, 9......Page 731
Oriented crystalline ultrastructure (OCU), 208......Page 929
--- 763......Page 1479
--- probability density, 206-207......Page 927
--- in stratified media, N layers, weak absorption case, 203-204......Page 924
--- in stratified media, single layer, 200......Page 921
--- in stratified media, single layer, weak absorption case, 201-203......Page 922
Lambert-Beer\'s law, 210......Page 931
--- kinetic analysis of reversible first-order reaction, 215-216......Page 936
--- temperature modulated excitation, 214......Page 935
Refractive index, 193......Page 914
Electromagnetic wave intensity, 194-195......Page 915
--- by X-ray photoelectron spectroscopy, 170......Page 891
--- for diamond film deposition, 127......Page 848
Cyclopentadienyl band structure, 86......Page 807
Transmission electron microscopy (TEM), as mass reduction system, 2......Page 724
--- kinetic rate equation approach, 5-6......Page 727
Volmer-Weber system, 3......Page 725
Hexatriaconate band structure, 96......Page 817
Round trip criterion, 485......Page 1204
Bloch wave method, 499-500......Page 1218
--- surface spectrum height, 238-239......Page 958
Momentum conservation, and band dispersion, 68......Page 789
--- and photoemission and inverse photoemission, 66......Page 787
--- amorphous, dielectric function, 284......Page 1004
--- types of roughness, 362......Page 1082
Spinodal decomposition, 17-18......Page 739
Surface enhanced infrared absorption (SEIRA), 221......Page 942
crystalline and amorphous, 179......Page 900
--- synthesis by nitrogen bombardment, 163-164......Page 884
--- synthesis by laser processing, 164-165......Page 885
--- and carbon nitride synthesis, 165-166......Page 886
--- Ni for diamond deposition, 178......Page 899
--- temperature-dependent resistivity, 175......Page 896
Thin film transistor display materials, 675-676......Page 1393
--- structural properties due to nitrogen partial pressure, 174......Page 895
--- catastrophic, 270-271......Page 990
--- planar, 273......Page 993
Endotoxins, 217......Page 938
--- stages, 4-5......Page 726
Fick\'s law, and Ostwald ripening, 41......Page 763
--- stoichiometry, 31......Page 753
--- energy density expression, 20......Page 742
--- volume fraction effects, 47-51......Page 769
--- power-law prediction for radius grOWth, 36......Page 758
51......Page 773
--- shape transitions, 27-33......Page 749
--- size and spatial ordering, 53-54......Page 775
--- mass transfer effects, 23-24......Page 745
--- magnetic properties, 579-580......Page 1298
--- morphology, 577-579......Page 1296
Self-similarity, and coalescence growth of clusters, 38-39......Page 760
Percolation growth, 39-40......Page 761
--- spatial distribution, 37......Page 759
Static coalescence cluster growth, 35-38......Page 757
--- cooperative, 24-25......Page 746
--- equilibrium model for strained systems, 22......Page 744
--- equilibrium theories, 19-23......Page 741
--- as self-organized process, 26-27......Page 748
Superdomes, 29-30......Page 751
--- composite electroplating, 143-146......Page 864
Ni/Ni-diamond composite layer, 146......Page 867
Photoelectric effect, 488......Page 1207
--- ion energy in growth, 158-159......Page 879
--- for cubic boron nitride synthesis, 151......Page 872
--- and cubic boron nitride characterization, 154......Page 875
--- characterization, 155-156......Page 876
--- for cubic boron nitride synthesis, 150......Page 871
Plasma enhanced CVD, and carbon nitride synthesis, 166......Page 887
--- reversible with monomer detachment from stable islands, 11-12......Page 733
6......Page 728
--- and CVD diamond characteristics, 131......Page 852
--- 138-139......Page 859
Positron annihilation spectroscopy, and CVD diamond characteristics, 139......Page 860
--- and CVD diamond characteristics, 136-138......Page 857
--- and CVD diamond characteristics, 133-136......Page 854
SEM, and CVD diamond characteristics, 130-131......Page 851
--- and CVD diamond characteristics, 132......Page 853
RF PACVD, process used for diamond films, 123......Page 844
--- surface peak in channeling aligned spectrum, 247......Page 967
--- direct and indirect, 250......Page 970
diameter calculations, 252-254......Page 972
--- by dislocations, 251-252......Page 971
--- from Co films on W substrate, 502......Page 1221
--- chemistry and physics, 117-119......Page 838
--- of diamond films, 120......Page 841
MEMS (microelectromechanical systems) technology, 128-129......Page 849
--- process used for diamond films, 121-123......Page 842
steel for diamond film deposition, 142-147......Page 863
--- for diamond films, 126-127......Page 847
thickness via spectroscopic ellipsometry, 278......Page 998
sensitivity of dielectric function, 281-282......Page 1001
Ultra-large scale integrated (ULSI) devices, 673......Page 1391
Double-well potential, 466-468......Page 1186
Transfer echo double resonance (TEDOR), 742......Page 1458
--- Lippmann-Schwinger equation, 509......Page 1228
--- effective complex models, 361-362......Page 1081
16......Page 738
ELNES spectra, 446--447......Page 1166
EXELFS formulas, 452-456......Page 1172
Morse potential, 468-471......Page 1188
--- structural inhomogeneities, 375......Page 1095
--- mechanism of enantiodifferentiation, 223-224......Page 944
--- in conjunction with GIXD, 536......Page 1255
--- and induced epitaxial crystallization, 256-257......Page 976
--- P-A trajectory, 339......Page 1059
Spectroscopic ellipsometry, see also EXACTA 2000......Page 2716
--- antiferromagnetic oxide, 573......Page 1292
--- rare-gas films on metallic substrate, 486-487......Page 1205
--- rectangular shape, 482......Page 1201
--- of carbon nitride thin films, 308......Page 1028
--- optical setup, 288......Page 1008
--- analysis by RBS-channeling technique, 255-256......Page 975
--- on compound semiconductors, 13-14......Page 735
VUV ellipsometry, 289......Page 1009
--- gas sensors, 677-678......Page 1395
--- Gell-Mann, Goldberger theory, 420-421......Page 1140
--- nucleation studies on, 12-13......Page 734
--- Co/NiO(111), 578-579......Page 1297
--- data collection, integrated intensities, and corrections, 534-536......Page 1253
--- bulk vs. surface, 533......Page 1252
--- and single-site green function, 510......Page 1229
--- and scattering theory, 417......Page 1137
Lindhard\'s continuum model, 243......Page 963
--- d-metal correlation study, 407-410......Page 1127
Oxyhydroxides, mixed, 410-411......Page 1130
--- using synchrotron light, 528......Page 1247
--- similarity to inverse photoemission spectroscopy, 65......Page 786
--- channeling critical angle, 245-246......Page 965
--- transverse spatial distributions of channeled particle, 244-245......Page 964
--- and coalescence growth of clusters, 34......Page 756
--- effect of attenuation, 490......Page 1209
--- multiple, and LEED theory, 494-501......Page 1213
Target-current spectroscopy (TCS), 491......Page 1210
VLEED (very low-energy electron diffraction), 500......Page 1219
Light-induced gyrotropy (LIG), 601......Page 1320
--- with Raman spectroscopy on diamond films, 135......Page 856
Loansdaleite, 118......Page 839
Screening length concept, 42......Page 764
photoemission at metal interface, 391-394......Page 1111
--- interface compound, 582-584......Page 1301
--- magnetic properties, 584-585......Page 1303
--- of a-C:H films and CNx films, 306......Page 1026
RHEED, and nucleation transition to step growth, 7......Page 729
--- of amorphous and polycrystalline thin films, 295-296......Page 1015
--- irreversible for i* -- 0/, 10-11......Page 732
--- irreversible with monomers as critical islands, 8-10......Page 730
15......Page 737
--- in postdeposition stage, 44--45......Page 766
--- sequential vs. simultaneous, 25-26......Page 747
--- fitting for MS system, 356-357, 359t......Page 1076
physical implications, 363-365......Page 1083
Pai-Enck expression, 389-390......Page 1109
--- partial wave expansion, 418-419......Page 1138
--- insulating, 396-397......Page 1116
--- interference effects during growth, 390......Page 1110
397......Page 1117
--- thick Pd films on MgO(O01), 567-568......Page 1286
--- perovskites, 678-679......Page 1396
Signal-to-noise ratio, for ME spectroscopy, 213......Page 934
--- limitations, 374-375......Page 1094
--- manifestation of quantum-size effects in photoemission, 518-521......Page 1237
--- photoemission oscillations with film thickness, 521-522......Page 1240
Screened KKR methods, 512-513......Page 1231
--- transition matrix elements and photocurrent, 513-514......Page 1232
--- photoemission theory, 514-516......Page 1233
--- use on Pt diffusion in SbPb60/40, 679......Page 1397
304......Page 1024
--- as probe molecule, 222......Page 943
--- Ag on Fe(001), 522-524......Page 1241
--- in Cu films on fcc Co(001), 517......Page 1236
Solar cells, 676......Page 1394
Reciprocal space, 532-533......Page 1251
--- amplitude in three-spin system, 743......Page 1459
--- natural abundance 13C experiment, 745-746......Page 1461
--- practical experimental aspects, 744-745......Page 1460
--- rotational resonance (RR) condition, 746-747......Page 1462
--- thin film thickness by energy width, 237......Page 957
--- stopping power, 236......Page 956
--- surface energy Es, 235......Page 955
--- total counts (area), 239......Page 959
--- by a double layer, 498-499......Page 1217
--- in many-body theory, 508......Page 1227
Spin-orbit coupling (SOC), 497......Page 1216
--- by single site, 495-496......Page 1214
--- by single site, the relativistic case, 496......Page 1215
Watson\'s theorem, 421--422......Page 1141
--- advantages of sample rotation, 662-663......Page 1380
--- deconvolution, 663-664......Page 1381
--- contamination sources, 670-671......Page 1388
--- doping by ion implantation, 669-670......Page 1387
--- post-processing of materials, 667......Page 1385
surface properties and adhesion, 666-667......Page 1384
--- magnetic dipolar interaction, 737-738......Page 1453
--- nuclear quadrupole interaction, 738-739......Page 1454
--- pump and probe waves with linear polarization, 613-614......Page 1332
--- polarization, 614......Page 1333
spectra for normal incidence, 504......Page 1223
Stokes parameter formalism, 603......Page 1322
--- density, thickness and surface roughness, 320-322......Page 1040
--- deposition conditions and band structure, 318......Page 1038
--- void content, 319-320......Page 1039
Urbach tail, 387......Page 1107
Willemite structure, of carbon nitride, 161-162......Page 882
483......Page 1967
427......Page 1912
Topological disorder, 597......Page 2079
Acoustic superlattice (ASL) structure, 460......Page 1944
Ionic conductivity, 135......Page 1624
417......Page 1902
Selective optical filters, 419......Page 1904
Vincett theory, 239......Page 1726
244......Page 1731
Stronium-barium niobate, 332......Page 1819
Fatigue, 68......Page 1557
337......Page 1824
370......Page 1856
Thermal imaging, 356......Page 1843
All-trans structure, 552......Page 2035
--- all-trans structure of, 563......Page 2046
568......Page 2051
Thin film bulk acoustic wave resonator (TFBAR), 240......Page 1727
--- nonferroelectric piezoelectrics, 298-303......Page 1785
--- aluminum nitride, 245-247......Page 1732
Thermal annealing, 222......Page 1710
384......Page 1870
YBCO films, 484......Page 1968
Monolayer structure, 550......Page 2033
Postannealing, 114......Page 1603
Face-to-face annealing, 338......Page 1825
--- magnetron and, 486......Page 1970
128......Page 1617
Thermionic emission, 127......Page 1616
X-ray diffraction (XRD), 11......Page 1500
381......Page 1867
--- Stark effect, 585......Page 2068
Surface analysis, 184......Page 1672
Double-beam optical interferometers, 263......Page 1750
350......Page 1837
355......Page 1842
Nanodomain poling, 462-463......Page 1946
520......Page 2004
Reflection absorption infrared spectroscopy (RAIRS), 183......Page 1671
X-ray photoelectron spectroscopy (XPS), 181......Page 1669
182......Page 1670
--- Zinc oxide, 242......Page 1729
261......Page 1748
Liquid electrode technique, 464......Page 1948
330......Page 1817
Surface morphology, 118-119......Page 1607
--- crystalline structure, 115-116......Page 1604
Polycrystalline films, 117......Page 1606
Silicon oxynitride films, 104......Page 1593
Ruthenium, 121-122......Page 1610
Schottl  barrier model, 119......Page 1608
--- gas sensors, 152......Page 1641
116......Page 1605
--- triple oxide, 217......Page 1705
--- 623......Page 2105
472......Page 1956
Richardson constant, 41......Page 1530
Scanning tunneling microscope (STM), 51......Page 1540
280......Page 1767
469......Page 1953
Double-alkoxide compounds, 327......Page 1814
Bismuth-oxide layered perovskites, 331-332......Page 1818
Hot electrons, 190......Page 1678
Ising model, 548......Page 2031
--- size effects on, 237......Page 1724
Polysilicon depletion effects, 197......Page 1685
Photon-phonon interaction, 295......Page 1782
Reflection high-energy electron diffraction (RHEED) technique, 243......Page 1730
293......Page 1780
Thermogravimetric and differential thermal analysis (TGA/DTA), 375......Page 1861
Electromechanical coupling factor, 131......Page 1620
Substrate plate trench cell (SPT), 103......Page 1592
Spectroscopic ellipsometry, 147......Page 1636
speed of, 170......Page 1658
Chebyshev filter design, 510......Page 1994
Spin coating, 110......Page 1599
Thermal evaporation, 319......Page 1806
577......Page 2060
Thallium-based high-temperature superconductors, 487......Page 1971
Strain relaxation, 283......Page 1770
130......Page 1619
Point defects, 399-431......Page 1884
Smakula formula, 405......Page 1890
Columnar grain kernels, 297......Page 1784
--- conductance, 583-584......Page 2066
Superconducting transmission lines, 496......Page 1980
Differential thermal analyzing (DTA) techniques, 438......Page 1922
137......Page 1626
196......Page 1684
506......Page 1990
353......Page 1840
Surface acoustic waves (SAW), 233......Page 1720
Self-equalization functions, 498......Page 1982
489......Page 1973
Fringing field effect, 443......Page 1927
Pulsed-poling technique, 465......Page 1949
199......Page 1687
Plug technique, 324......Page 1811
Wall domain, 434......Page 1918
--- locked, 441......Page 1925
Ti in-diffusion process, 455......Page 1939
Retention, 70......Page 1559
--- Zero-field relative polarizability, 547......Page 2030
567......Page 2050
574......Page 2057
--- Zero bias capacitance, 357......Page 1844
54......Page 1543
Hysteresis, 25......Page 1514
Hole-buming spectroscopy, 29......Page 1518
--- interface trapped charge, 38......Page 1527
55......Page 1544
--- fatigue, 81......Page 1570
Power transmission coefficient, 490......Page 1974
458......Page 1942
Vapor transport equilibration (VTE), 468......Page 1952
133......Page 1622
Screening mechanisms, 466......Page 1950
Merz method, 549......Page 2032
336......Page 1823
--- Zirconate titanate (PZT), 4......Page 1493
--- deposition and, 223......Page 1711
--- gate current versus gate voltage, 179-180......Page 1667
Temperature acceleration effect, 194......Page 1682
193......Page 1681
--- time-dependent, 33-34......Page 1522
Sawyer-Tower method, 265......Page 1752
Dissipation factor, 132......Page 1621
354......Page 1841
--- Zero-bias thermally stimulated current (ZBTSC), 13......Page 1502
42......Page 1531
Dielectric-layer model, 573-575......Page 2056
Saturation polarization, 284......Page 1771
571......Page 2054
--- surface coverage induced, 450......Page 1934
--- sidewise, 447-448......Page 1931
Frequency hopping, 512......Page 1996
84......Page 1573
Effective medium approximation formula (EMA), 408......Page 1893
303......Page 1790
Martensitic transformations, 518......Page 2002
186......Page 1674
75......Page 1564
463......Page 1947
274......Page 1761
Yttria stabilized zirconia (YSZ), 268......Page 1755
Electrostriction coefficient, 578......Page 2061
Energy band diagrams, 64......Page 1553
Volatilization, 376......Page 1862
346......Page 1833
Optical pumping cycle, 425......Page 1910
146......Page 1635
569......Page 2052
Fermi-level pinning, 62......Page 1551
134......Page 1623
352......Page 1839
Lead magnesium niobate-lead titanate (PMN-PT), 286-291......Page 1773
285......Page 1772
392......Page 1878
341......Page 1828
Very large scale integration (VLSI), 1-60, see specific devices, material......Page 1490
Phase shifters, 497......Page 1981
Preselect filter, 509......Page 1993
--- interfacial, 523......Page 2007
24......Page 1513
--- gallium nitride, 247-248......Page 1734
Reverse engineering, 595......Page 2077
Grain-boundary-limited conduction (GBLC), 60......Page 1549
Hook law, 391......Page 1877
--- mechanisms of, 201-204......Page 1689
Silicon substrates, 378......Page 1864
Yttrium manganites, 315......Page 1802
--- 259......Page 1746
348......Page 1835
494......Page 1978
46......Page 1535
Polarity dependence, 195......Page 1683
191......Page 1679
--- fatigue and, 387......Page 1873
69......Page 1558
Kobayashi hydrodynamic theory, 439......Page 1923
Stacking faults, 294......Page 1781
Ion beam analysis, 185......Page 1673
Stochiometry problem, 321......Page 1808
--- isotopic substitution, 202......Page 1690
Residual inhomogeneities, 491......Page 1975
519......Page 2003
--- Z-type deposition, 558-559......Page 2041
Lanthanum-substituted bismuth titanate, 325-326......Page 1812
Theta-two-theta geometry, 562......Page 2045
393......Page 1879
Lead niobium titanate, 255......Page 1742
--- lead titanate zirconate, 248-250......Page 1735
Leakage current, 124......Page 1613
138......Page 1627
36......Page 1525
--- hopping conduction, 20......Page 1509
--- deposition methods, 21......Page 1510
17......Page 1506
--- lithium niobate, 250-251......Page 1737
Lithium tantalate, 314......Page 1801
508......Page 1992
Low-pressure chemical vapor deposition (LPCVD), 15......Page 1504
M layers, 600......Page 2082
Superlattice structures, 323......Page 1810
Transducers, 264-265......Page 1751
Transition layers, 200......Page 1688
171......Page 1659
--- 177-179......Page 1665
Metal-insulator-metal (MIM)structure, 102......Page 1591
329......Page 1816
Metastability, 526......Page 2010
Schlenk technique, 335......Page 1822
492......Page 1976
452......Page 1936
467......Page 1951
Pulsed laser deposition (PLD), 113......Page 1602
--- modulation coefficents, 572......Page 2055
Optical amplifiers, 423-425......Page 1908
Stochastic theory, 188......Page 1676
210......Page 1698
Template layers, 379......Page 1865
Nuclear reaction analysis (NRA), 187-189......Page 1675
--- nucleation theory, 448......Page 1932
Ohmic contact, 61......Page 1550
--- orientation of films and, 377-378......Page 1863
Oxynitride growth, 211-212......Page 1699
Spherulite balls, 553......Page 2036
Positive temperature coefficient of resistivity (PTCR), 72......Page 1561
Patch resonators, 499......Page 1983
Scanning force microscope (SFM), 445......Page 1929
piezoelectric tensor, 232......Page 1719
Porosity, 281......Page 1768
Trifluoroethylene, 554-555......Page 2037
--- piezoelectric response, 275......Page 1762
Wemple single oscillator model, 145......Page 1634
Plasma immersion ion implantation (PIII), 175......Page 1663
--- PVD and, 320-321......Page 1807
Pointwise constrained optimization, 616......Page 2098
--- strain-induced, 459......Page 1943
Pyrochlore phase, 290......Page 1777
Raydan algorithm, 615......Page 2097
Reactive layer model, 203......Page 1691
Urbach energy, 598......Page 2080
347......Page 1834
22......Page 1511
Schottky-tunneling conduction model, 74......Page 1563
Solar cells, 612......Page 2094
Vacancy induced space charge effects, 451-452......Page 1935
Sticking coefficent, 301......Page 1788
534......Page 2018
Tetra-isopropyl-titanate (TPT), 43......Page 1532
Thermal treatment, 389-390......Page 1875
299......Page 1786
Voltage stress, 66......Page 1555
65......Page 1554
--- thickness size effects, 235......Page 1722
Vander Waals forces, 474......Page 1958
269......Page 1756
Ab initio molecular dynamics, a-C, 429-432......Page 2541
--- A1GaN alloys, 109-110......Page 2226
--- properties of, 528-534......Page 2640
Aln buffers, 79-81......Page 2196
Nitrogen plasma sources, in MBE, 65......Page 2182
Si(111) surface, step on right side, 5-6......Page 2122
--- 652......Page 2764
--- on Si avalanche photodiode, 348-349......Page 2462
Strain-compensated alloy, band gap, 272......Page 2387
--- Rf, fabrication of BKBO system thin films, 561......Page 2673
--- allotropic form of carbon, 406......Page 2518
Buffer layers, epitaxial GaN films, 78-79......Page 2195
--- band structure, 204......Page 2320
--- 699......Page 2811
--- high field DC conductivity, 234......Page 2350
--- lateral resistivity, 216......Page 2332
238......Page 2354
--- band structure, 203......Page 2319
--- high field DC conductivity, 232......Page 2348
--- lateral resistivity, 213......Page 2329
--- high field DC conductivity, 225......Page 2341
--- high field DC conductivity, 227......Page 2343
--- lateral resistivity, 211......Page 2327
--- hydrogenated parts (a-C:H), 403-506......Page 2515
--- deposition of a-C films, 407......Page 2519
--- subplantation, 419......Page 2531
--- thermal spike, 418......Page 2530
Surfactants, use in Si/Ge relaxed films, 336......Page 2450
Local strain distribution, Si/Ge, 258......Page 2373
--- model for C incorporation into growing films, 251......Page 2366
--- hole transport in, 275......Page 2390
--- by electron injection at cathodic potentials, 33-36......Page 2150
Underwater communications, 58......Page 2175
Normal-state Hall effect, HTSCs, 580-581......Page 2692
C-axis transport properties and Hall effect, YBCO thin films, 531-532......Page 2643
Metal-organic deposition (MOD), fabrication of HTSC thin films, 515......Page 2627
--- YBCO thin films, 526......Page 2638
Dip coating, fabrication of HTSC thin films, 517......Page 2629
Conduction band, carbon-containing silicon films, 271......Page 2386
Space-charge-limited conductivity (SCLC), 221......Page 2337
Critical current density, YBCO thin films, 529-530......Page 2641
Current versus voltage (I/V) characteristic, a-C, 474-475......Page 2586
--- electron field emission properties of, 489-491......Page 2601
--- studies of DAC films, 439--441......Page 2551
Doping dependence, HTSCs, 579-580......Page 2691
--- optical gaps E1 and E 1......Page 2118
--- fabrication of HTSC thin films, 512......Page 2624
Neutron diffraction, a-C microstructure, 422-424......Page 2534
--- 378-379......Page 2491
Stillinger-Weber potential, a-C, 425-426......Page 2537
Epitaxial orientation, GaN/sapphire interface, 70-73......Page 2187
Ethylenediaminetetraacetic acid (EDTA), 233......Page 2349
Wide area networks, Ge films to detect near-infrared light, 328......Page 2442
--- HTSC/FE heterostructures, 609......Page 2721
--- spectrum of c-Si at room temperature, 10......Page 2127
--- a-C, 414......Page 2526
376......Page 2489
386......Page 2499
390......Page 2503
Flux pinning and flux creep, HTSCs, 582-583......Page 2694
--- FTIR studies, 436--439......Page 2548
--- epilayers and heterostructures, 117-186......Page 2233
--- growth of GaN in, 86-87......Page 2203
--- growth on Si, 343-346......Page 2457
Graded buffer layers, in Si/Ge relaxed films, 334-336......Page 2448
Raman lineshapes, a-C thin films, 447......Page 2559
--- photoconductivity of, 477......Page 2589
Variable-range hopping, 223......Page 2339
--- 6H-SiC substrates, growth on, 81-85......Page 2198
14......Page 2131
--- Tunable microwave devices, HTSC/FE heterostructures, 608-609......Page 2720
--- properties of, 606-608......Page 2718
--- Thermochemistry, GaN growth kinetics and, 61-62......Page 2178
--- phase separation in, 101-104......Page 2218
--- physical properties, 148-149......Page 2264
Inversion domains (ID), 94-95......Page 2211
--- fabrication of HTSC thin films, 511-512......Page 2623
--- YBCO thin films, 525-526......Page 2637
Ion beam techniques, a-C, 413-424......Page 2525
Irreversibility line and upper critical field, HTSCs, 583-584......Page 2695
Microwave surface impedance, BCCO thin films, 541......Page 2653
Vortex dynamics and dissipation mechanisms, HTSCs, 581-587......Page 2693
Quantum behavior, ultrathin films, 587......Page 2699
--- fabrication of BCCO thin film, 539-540......Page 2651
Laser molecular beam epitaxy, fabrication of HTSC thin films, 514-515......Page 2626
Laser techniques, a-C, 415......Page 2527
--- temperature dependence of intensity, 443......Page 2555
--- YBCO thin films, 527-528......Page 2639
--- InGaN alloys, 104-108......Page 2221
--- fabrication of HTSC thin films, 510......Page 2622
--- YBCO thin films, 523-525......Page 2635
Paramagnetic Meissner effect, HTSCs, 589......Page 2701
Perovskite structural substrates, in HTSC thin films, 519......Page 2631
--- fabrication of HTSC thin films, 516-517......Page 2628
Reactor design, MOCVD, 63-64......Page 2180
Microwave property, YBCO thin films, 532-534......Page 2644
RF plasma sources, in MBE, 66......Page 2183
Nitridation, GaN/sapphire interface, 73-78......Page 2190
Optical gap and density of state, a-C, 433-434......Page 2545
--- electron field emission properties of, 487-488......Page 2599
--- nitrogenated, 445-446......Page 2557
Polarization memory, PAC films, 444--445......Page 2556
Photovoltage transients, 7......Page 2124
Pulsed laser excitation, one-dimensional, 8......Page 2125
Poole-Frenkel effect, 222......Page 2338
452......Page 2564
--- visible, a-C, 449-452......Page 2561
Reflection high-energy electron diffraction (RHEED), 196......Page 2312
Sapphire substrates, growth on, 69-81......Page 2186
Silicon (111) substrates, growth on, 85......Page 2202
Spin superconducting valve, FM/S/FM, 611......Page 2723
--- a-C, 411-413......Page 2523
Substrates, processed, growth on, 337-338......Page 2451
Superconducting state Hall effect, HTSCs, 586-587......Page 2698
--- annealing of, 476-477......Page 2588
--- electron field emission properties of, 491-492......Page 2603
--- in situ doping of, 480-481......Page 2592
110......Page 2227
--- Tersoff potential, a-C, 426-427......Page 2538
--- Theoretical background, cadmium, 236......Page 2352
687......Page 2799
--- Thermopower, YBCO thin films, 530-531......Page 2642
--- Thin anodic oxides, 4-5......Page 2121
--- Tight-binding approaches, a-C, 427-429......Page 2539
Urbach tail energy, a-C, 434-435......Page 2546
Valence band, carbon-containing silicon films, 269......Page 2384
Vortex melting, HTSCs, 584......Page 2696
YBCO-related-material thin films, 534-538......Page 2646
--- terahertz radiation from, 593-594......Page 2705
106......Page 2923
--- acoustic deformation potential, 452-453......Page 3266
47......Page 2865
Trilevel technique, 28......Page 2846
Sintered magnets, 387......Page 3202
496......Page 3310
Soft magnetic materials, 386......Page 3201
Magnetomotive force, 376......Page 3191
Williams, M. L., 21......Page 2839
Scanning transmission electron diffraction, 69......Page 2887
--- pristine, 74......Page 2892
Rigid ion model, 252......Page 3068
Perpendicular magnetic anisotropy, 572......Page 3385
Annealing, 351......Page 3166
574......Page 3387
--- band, 110......Page 2927
117......Page 2934
Antiferromagnetically coupled multilayers, 518......Page 3332
44......Page 2862
48......Page 2866
--- for replay heads, 51......Page 2869
Surface state transitions, 75......Page 2893
15......Page 2833
Xia, J. B., 114......Page 2931
Tunnel junctions, 65......Page 2883
Slater, J. C., 132......Page 2949
Magnetoelastic energy, 544......Page 3358
Reflection high-energy electron diffraction, 404......Page 3219
Rauch, C., 135-136......Page 2952
390......Page 3205
Zero-phonon emissions, 109......Page 2926
Barkhausen noise, 393......Page 3208
Wolfram, T., 148......Page 2964
B loch equation, 561......Page 3374
--- second-neighbor, 102......Page 2919
--- intraband transitions, 290-292......Page 3106
--- mechanism, 136......Page 2953
Superlattice subbands, 220......Page 3036
299......Page 3115
Torque, 142......Page 2958
--- pseudodirect type II, 113......Page 2930
357......Page 3172
Born approximation, 261......Page 3077
Mixed conductors, 448-449......Page 3262
--- neutral impurity, 450......Page 3264
Structural isomers, 70......Page 2888
--- 621......Page 3433
Shubnikov--de Haas effect, 283......Page 3099
112......Page 2929
--- split-orbit-split, 129......Page 2946
Ting, D. Z.-Y., 101......Page 2918
YBCO thick film, 600......Page 3412
--- carrier-cartier, 456-457......Page 3270
128......Page 2945
131......Page 2948
Wafer-scale parallel processing, 11......Page 2829
13......Page 2831
--- gas aggregation, 356......Page 3171
--- size distribution, 358-359......Page 3173
Magnetic viscosity, 342-344......Page 3157
Saturation magnetization, 346......Page 3161
370......Page 3185
Thermal fluctuation, 504......Page 3318
510......Page 3324
--- thermal stability, 512......Page 3326
Superparamagnetic phenomenon, 505......Page 3319
Stoner-Wohlfarth theory, 340......Page 3155
120......Page 2937
124......Page 2941
Zero-phonon transition, 122......Page 2939
Viscoelastic response, 19......Page 2837
235......Page 3051
570......Page 3383
297......Page 3113
Rayleigh-Schrrdinger perturbation theory, 256......Page 3072
363......Page 3178
Intergranular exchange coupling, 369......Page 3184
--- with polarization analysis, 525......Page 3339
18......Page 2836
Thermosets, 16......Page 2834
Zero bandgap, 78......Page 2896
Macroscopic continuum model, 258......Page 3074
360......Page 3175
285......Page 3101
--- exchange modes, 145......Page 2961
--- experimental, 125......Page 2942
Spontaneous magnetization, 382......Page 3197
Pattern definition, 6......Page 2824
--- magnetic field, 244......Page 3060
--- band structure, 442......Page 3256
Size quantum limit, 270-273......Page 3086
Lorentz deflection, 415......Page 3230
458......Page 3272
470......Page 3284
Sol-gel, 10......Page 2828
Wannier-Stark quantized level model, 134......Page 2951
Drude-Lorentz theory, 447......Page 3261
Thermoplastic polymers, 42......Page 2860
539......Page 3353
123......Page 2940
105......Page 2922
Tight-binding model, 108......Page 2925
225......Page 3041
--- patterns, 24......Page 2842
--- symmetry properties, 221......Page 3037
Ekimov, A. I., 93......Page 2911
273......Page 3089
Zero-phonon line, 115......Page 2932
Proximity printing, 211......Page 3027
277......Page 3093
298......Page 3114
Potential energy hypersurface, 84......Page 2902
--- splitting, 119......Page 2936
Yamaguchi, M., 118......Page 2935
444......Page 3258
Even potential states, 255......Page 3071
Exchange-biased spin-valve sandwiches, 519......Page 3333
523......Page 3337
Joule heating effect, 534......Page 3348
182......Page 2998
Impurity binding energy, 329......Page 3145
Wannier exciton, 229......Page 3045
Gaussian function, 300......Page 3116
Residual layer thickness, 25......Page 2843
Fermi wavevector, 181......Page 2997
Field sweeps, 605......Page 3417
Thin film writers, 541-543......Page 3355
377......Page 3192
14......Page 2832
Screening effect, 276......Page 3092
Fresnel microscopy, 414-415......Page 3229
Four-index matrix, 274-275......Page 3090
Self-assembled monolayer, 50......Page 2868
428......Page 3243
Transition region, 20......Page 2838
Zunger, A., 126......Page 2943
Tridiagonal matrix method, 155......Page 2971
268......Page 3084
Stokes integration law, 378......Page 3193
Superparamagnetic limit, 503-507......Page 3317
Whitesides, G. M., 4......Page 2822
--- piezoelectric, 454-455......Page 3268
--- effective spin wave, 149......Page 2965
322......Page 3138
243......Page 3059
228......Page 3044
575......Page 3388
549......Page 3363
Vogel temperature, 22......Page 2840
Hyperfine field, 564......Page 3377
349......Page 3164
368......Page 3183
Magnetization curve, 384-385......Page 3199
Thermodynamics, 26......Page 2844
--- interparticle interactions, 341-342......Page 3156
Transfer matrix formalism, 157......Page 2973
Spin-flop coupling, 394-395......Page 3209
535......Page 3349
--- interfacial spin-dependent, 522......Page 3336
--- intersubband, 263-264......Page 3079
Isomer shift, 566......Page 3379
Kerr spectroscopy, 409-410......Page 3224
Linear response theory, 282......Page 3098
420......Page 3235
Leading term approximation, 257......Page 3073
--- time-resolved, 302......Page 3118
Lyddane-Sachs-Teller relations, 251......Page 3067
359......Page 3174
Magnetocrystalline anisotropy, 380......Page 3195
Magnetic X-ray circular dichroism, 362......Page 3177
Spin-stand method, 513......Page 3327
Micro-fluxgate sensor, 429-430......Page 3244
Strain anisotropy, 381......Page 3196
348......Page 3163
573......Page 3386
601......Page 3413
Modified dielectric continuum model, 259......Page 3075
558......Page 3371
576......Page 3389
545......Page 3359
X-ray diffraction, 347......Page 3162
Nuclear quadropole moment, 565......Page 3378
Ohm\'s law, 453......Page 3267
Operator transformation method, 158......Page 2974
--- polar optical, 455-456......Page 3269
--- optical phonon, 473......Page 3287
478......Page 3292
Uniaxial anisotropy film, 532......Page 3346
Oscillation periodicity, 180......Page 2996
515......Page 3329
Perpendicular recording, 501......Page 3315
Perturbation potential, 269......Page 3085
Phase diagrams, 546......Page 3360
191......Page 3007
Photolithographic fabrication process, 516......Page 3330
Valence band offset, 104......Page 2921
293......Page 3109
Poisson equation, 267......Page 3083
--- polaron effect, 254-259......Page 3070
Rochat, M., 137......Page 2954
--- fractional, 482-484......Page 3296
Unbound motions, 216......Page 3032
Quantum well luminescence, 303-308......Page 3119
--- type I, 230......Page 3046
294......Page 3110
--- type II, 231......Page 3047
--- interband transitions, 292-296......Page 3108
250......Page 3066
--- Rayleigh, 307......Page 3123
Reflection-transmission phenomena, 291......Page 3107
Resonant absorption, 557......Page 3370
Resonant scattering states, 172......Page 2988
195......Page 3011
Resonant tunneling, 280-281......Page 3096
520......Page 3334
--- by phonons, 451......Page 3265
Seed layer, 508......Page 3322
SOFMAX, 548......Page 3362
Spin map, 395......Page 3210
Spin term, 242......Page 3058
521......Page 3335
Spin valve magnetic heads, 432......Page 3247
Spin valve types, 529-531......Page 3343
567......Page 3380
--- with substrate bias, 417......Page 3232
--- reactive, 418......Page 3233
Uniaxial anisotropy, 397......Page 3212
580......Page 3393
239......Page 3055
509......Page 3323
Thermal activation, 398......Page 3213
Thermodynamic nonequilibrium, 265......Page 3081
399......Page 3214
Transfer matrix method, 156-158......Page 2972
506......Page 3320
528......Page 3342
Warped-sphere constant energy surfaces, 460......Page 3274
Yoke permanence, 542-543......Page 3356
Zinc-blende structure, 234......Page 3050